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MOSFET Selection for High-Power and Portable Applications: FDP047N10, FDMA507PZ
time:2025-12-23
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In today's demanding power design landscape, selecting the optimal MOSFET requires a careful balance of current handling, efficiency, size, and cost. This analysis uses two distinct MOSFETs from onsemi—the high-power FDP047N10 (N-channel) and the compact FDMA507PZ (P-channel)—as benchmarks. We will evaluate their design cores and primary applications, then compare them with the domestic alternative solutions VBM1103 and VBQG2317, providing a clear selection guide for your next project.
Comparative Analysis: FDP047N10 (N-channel) vs. VBM1103
Analysis of the Original Model (FDP047N10) Core:
This is a 100V N-channel MOSFET from onsemi in a TO-220 package. Its design core leverages PowerTrench technology to minimize on-resistance while maintaining excellent switching performance. Key advantages are: an ultra-low on-resistance of 3.9mΩ at a 10V gate drive and a very high continuous drain current rating of 164A. This makes it engineered for high-current, high-efficiency power stages.
Compatibility and Differences of the Domestic Alternative (VBM1103):
VBsemi's VBM1103 is a direct pin-to-pin compatible alternative in the same TO-220 package. It matches the original's 100V voltage rating and offers a comparable, slightly lower on-resistance of 3mΩ @10V. Its continuous current rating is a robust 180A, surpassing the original. This represents a performance-enhanced domestic alternative for high-power circuits.
Key Application Areas:
Original Model FDP047N10: Ideal for high-current switching applications where low conduction loss is critical.
High-power DC-DC converters and SMPS (e.g., server, telecom power supplies).
Motor drives and inverters for industrial equipment.
Automotive systems and power distribution modules.
Alternative Model VBM1103: Suited for the same high-power applications as the original, offering a potential upgrade path with its higher current rating and marginally lower RDS(on), beneficial for designs seeking maximum efficiency and current margin.
Comparative Analysis: FDMA507PZ (P-channel) vs. VBQG2317
Analysis of the Original Model (FDMA507PZ) Core:
This is a 20V P-channel MOSFET from onsemi in a compact VDFN-6 (2x2) package. It is specifically designed for battery charging and load switching in ultra-portable applications like smartphones. Its core advantages are: a low on-resistance of 24mΩ at 5V drive, a continuous current of 7.8A, and excellent thermal performance from its tiny MicroFET package, making it ideal for linear mode operation.
Compatibility and Differences of the Domestic Alternative (VBQG2317):
VBsemi's VBQG2317 is a compatible alternative in a similar DFN6(2x2) package. The main differences are electrical: VBQG2317 has a higher voltage rating (-30V) but a lower continuous current rating (-10A). Its on-resistance is 20mΩ at 4.5V gate drive, which is competitive with the original.
Key Application Areas:
Original Model FDMA507PZ: Optimized for space-constrained, battery-powered devices.
Load switches and power management in smartphones, tablets, and IoT devices.
Battery charging circuits and power path management in portable electronics.
Alternative Model VBQG2317: Suitable for P-channel applications requiring a higher voltage margin (up to -30V) while maintaining good current handling (up to -10A) in a compact footprint. It's a versatile choice for various load switching and power distribution tasks in portable and compact systems.
Conclusion:
This comparison reveals two clear selection paths based on application needs:
1. For high-power, high-current N-channel applications, the original FDP047N10 sets a high standard with its 164A capability and 3.9mΩ RDS(on). The domestic alternative VBM1103 not only matches this performance but offers potential gains with 180A current and 3mΩ RDS(on), presenting a strong, performance-enhanced substitute.
2. For compact P-channel applications in portable electronics, the original FDMA507PZ excels with its optimized balance of low RDS(on), 7.8A current, and excellent thermal performance in a 2x2mm package. The domestic alternative VBQG2317 offers a compelling option with a higher -30V rating and competitive on-resistance, suitable for designs prioritizing voltage headroom.
The core takeaway is that selection hinges on precise requirement matching. Domestic alternatives like VBM1103 and VBQG2317 provide not only reliable compatibility but also opportunities for parameter-specific enhancement or optimization, offering engineers greater flexibility and resilience in design and supply chain strategy.
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