In today's pursuit of device miniaturization and high efficiency, selecting the right MOSFET for a compact circuit board is a key challenge for engineers. This involves careful trade-offs among performance, size, cost, and supply chain resilience. This article takes two highly representative MOSFETs, PMV90ENER and PMV28UNEAR, as benchmarks, analyzes their design cores and application scenarios, and evaluates two domestic alternative solutions, VB1307N and VB1240. By clarifying parameter differences and performance orientations, we aim to provide a clear selection guide for your next power switching design.
Comparative Analysis: PMV90ENER (N-channel) vs. VB1307N
Analysis of the Original Model (PMV90ENER) Core:
This is a 30V N-channel MOSFET from Nexperia in a compact SOT-23 package. Its design focuses on providing reliable switching capability in a small footprint. Key advantages include a continuous drain current of 3A and an on-resistance of 72mΩ at 10V gate drive. It utilizes Trench MOSFET technology for good performance in space-constrained applications.
Compatibility and Differences of the Domestic Alternative (VB1307N):
VBsemi's VB1307N is a direct pin-to-pin compatible alternative in SOT23-3 package. The main differences are in electrical parameters: VB1307N offers a lower on-resistance of 47mΩ at 10V and a higher continuous current rating of 5A, while maintaining the same 30V drain-source voltage rating. This represents a performance enhancement over the original.
Key Application Areas:
Original Model PMV90ENER: Suitable for low-power switching, load management, and signal switching in 30V systems where space is limited, such as portable devices, IoT modules, and power management circuits.
Alternative Model VB1307N: Better suited for applications requiring lower conduction loss and higher current capability (up to 5A) within the same voltage range, such as more demanding load switches or DC-DC converter circuits.
Comparative Analysis: PMV28UNEAR (N-channel) vs. VB1240
Analysis of the Original Model (PMV28UNEAR) Core:
This Nexperia 20V N-channel MOSFET in SOT-23 package is designed for applications requiring low on-resistance and moderate current. Its key features include a continuous drain current of 4.7A and a low on-resistance of 24mΩ at 4.5V gate drive, making it efficient for power management in compact designs.
Compatibility and Differences of the Domestic Alternative (VB1240):
VBsemi's VB1240 is a pin-to-pin compatible alternative. It shows significant parameter improvements: a higher continuous current of 6A and a lower on-resistance of 28mΩ at 4.5V (though note the original is 24mΩ at 4.5V; VB1240 offers 42mΩ at 2.5V and 28mΩ at 4.5V). It maintains a 20V voltage rating.
Key Application Areas:
Original Model PMV28UNEAR: Ideal for 20V system applications like battery-powered device load switches, DC-DC conversion (especially as a low-side switch), and motor drive circuits where balance between size and performance is critical.
Alternative Model VB1240: A strong choice for upgraded scenarios demanding higher current (6A) and good efficiency at lower gate drive voltages, suitable for enhanced power management and motor control applications.
Conclusion:
This analysis reveals two selection paths. For 30V applications in SOT-23 packages, the original PMV90ENER offers a proven solution, while its domestic alternative VB1307N provides a performance-enhanced option with lower RDS(on) and higher current. For 20V applications, PMV28UNEAR delivers a good balance, and VB1240 serves as a capable alternative with improved current handling. The core principle remains precise requirement matching. Domestic alternatives not only offer supply chain resilience but also performance enhancements, giving engineers greater flexibility in design and cost optimization. Understanding each device's parameters is key to maximizing circuit performance.