In the design of medium to high power circuits, selecting a MOSFET that balances performance, efficiency, and cost is a critical task for engineers. This goes beyond simple part substitution—it requires careful consideration of electrical characteristics, thermal management, and supply chain stability. This article takes two representative MOSFETs, IRLZ24NSTRLPBF (N-channel, 55V) and IPB60R190C6 (N-channel, 600V CoolMOS), as benchmarks. It provides a deep analysis of their design cores and application scenarios, followed by a comparative evaluation of two domestic alternative solutions: VBL1632 and VBL165R20S. By clarifying parameter differences and performance orientations, we aim to provide a clear selection guide to help you find the most suitable power switching solution in the complex component landscape.
Comparative Analysis: IRLZ24NSTRLPBF (55V N-channel) vs. VBL1632
Analysis of the Original Model (IRLZ24NSTRLPBF) Core:
This is a 55V N-channel MOSFET from Infineon, utilizing the robust D2PAK (TO-263) package. Its design core is based on the fifth-generation HEXFET technology, which achieves extremely low on-resistance per silicon area. Key advantages include: a continuous drain current (Id) of 18A and an on-resistance (RDS(on)) of 75mΩ at 10V gate drive. Combined with fast switching speed and a rugged design, it offers high efficiency and reliability. The D2PAK package provides excellent power handling capability and low internal connection resistance, suitable for dissipating up to 2.0W in typical surface-mount applications, making it ideal for medium-current uses.
Compatibility and Differences of the Domestic Alternative (VBL1632):
VBsemi's VBL1632 is also offered in a TO-263 package and serves as a pin-to-pin compatible alternative. The main differences lie in enhanced electrical parameters: VBL1632 features a slightly higher voltage rating (60V vs. 55V) and significantly better current handling and conduction performance. It boasts a continuous drain current of 50A and a much lower on-resistance of 32mΩ at 10V (compared to 75mΩ for the original). This indicates substantially reduced conduction losses and higher current capability.
Key Application Areas:
Original Model IRLZ24NSTRLPBF: Well-suited for various medium-power applications requiring a balance of cost, reliability, and performance in a standard package. Typical uses include:
DC-DC converters and voltage regulators in 12V/24V/48V systems.
Motor drives for small to medium brushed DC motors.
Power management and load switching in industrial controls, automotive subsystems.
Alternative Model VBL1632: An excellent "performance-enhanced" drop-in replacement. Its lower RDS(on) and higher current rating make it ideal for upgrades in existing designs or new projects demanding higher efficiency, lower thermal stress, and greater power density within the same footprint. Suitable for more demanding motor drives, high-current DC-DC conversion, and power distribution switches.
Comparative Analysis: IPB60R190C6 (600V CoolMOS C6) vs. VBL165R20S
This comparison shifts to the high-voltage domain, where switching and conduction losses at high voltages are paramount.
Analysis of the Original Model (IPB60R190C6) Core:
This 600V N-channel MOSFET from Infineon belongs to the revolutionary CoolMOS C6 series, based on the superjunction (SJ) principle. Its design core focuses on minimizing both switching and conduction losses simultaneously. Key advantages include: a drain current of 20.2A and an RDS(on) of 190mΩ at 10V gate drive. The CoolMOS C6 technology enables fast switching without sacrificing ease of use, leading to highly efficient, compact, and cooler-running power supplies.
Compatibility and Differences of the Domestic Alternative (VBL165R20S):
VBsemi's VBL165R20S is a direct domestic alternative in a TO-263 package. It matches the original's high-current switching role with comparable key specs: a voltage rating of 650V (slightly higher), a continuous current of 20A, and an improved on-resistance of 160mΩ at 10V (vs. 190mΩ). This indicates potentially lower conduction losses. It utilizes a Super Junction Multi-EPI process, aiming to deliver similar benefits of high efficiency and fast switching for demanding high-voltage applications.
Key Application Areas:
Original Model IPB60R190C6: A cornerstone for high-efficiency, high-density offline power supplies. Its ideal applications include:
Switch-Mode Power Supplies (SMPS): PFC stages, main switches in flyback/forward/LLC resonant converters.
Industrial power systems: UPS, solar inverters, motor drives operating from AC mains.
Lighting: High-performance LED drivers.
Alternative Model VBL165R20S: Serves as a viable domestic alternative for the above high-voltage applications, particularly where supply chain diversification or cost optimization is needed. Its slightly lower RDS(on) can contribute to marginal efficiency improvements. It is suitable for PFC circuits, hard-switched and resonant converters in AC-DC power supplies, and other 600V+ switching applications.
Summary and Selection Paths:
This analysis reveals two distinct selection strategies based on voltage class:
For medium-voltage (55V-60V) applications where upgrading existing D2PAK/TO-263 designs is key, the domestic alternative VBL1632 presents a compelling "performance-plus" option. It offers significant gains in current capability (50A vs. 18A) and conduction loss (32mΩ vs. 75mΩ) over the original IRLZ24NSTRLPBF, enabling higher power density and efficiency in motor drives, converters, and power switches.
For high-voltage (600V-650V) applications demanding efficient power conversion from AC mains, the original IPB60R190C6 sets a high standard with its advanced CoolMOS C6 technology. The domestic alternative VBL165R20S provides a functionally compatible and electrically competitive option, with a slightly lower RDS(on), suitable for designers seeking a reliable alternative for SMPS, PFC, and industrial power systems without compromising performance.
Core Conclusion: Selection is not about absolute superiority but precise requirement matching. In an era of supply chain diversification, domestic alternatives like VBL1632 and VBL165R20S not only provide viable backup options but also offer performance enhancements or parity in key parameters. This gives engineers greater flexibility and resilience in design trade-offs and cost control. Understanding the design philosophy and parametric implications of each device is essential to unlocking its full potential in your circuit.