In modern power design, balancing robust performance, thermal efficiency, and cost is critical. Selecting the optimal MOSFET involves more than a simple cross-reference—it requires a careful evaluation of voltage, current, on-resistance, and package suitability. This article takes two established Infineon MOSFETs—IRLR3915TRPBF (N-channel) and BSC028N06NSATMA1 (N-channel)—as benchmarks, analyzes their design focus and typical applications, and compares them with two domestic alternatives, VBE1615 and VBGQA1602. By clarifying parameter differences and performance orientations, we provide a clear selection guide to help you choose the most suitable power switching solution.
Comparative Analysis: IRLR3915TRPBF (N-channel) vs. VBE1615
Analysis of the Original Model (IRLR3915TRPBF) Core:
This is a 55V N-channel MOSFET from Infineon in a TO-252 (DPAK) package. Its design emphasizes a reliable balance of voltage, current, and conduction loss for medium-power applications. Key advantages include a 30A continuous drain current and an on-resistance (RDS(on)) of 14mΩ at 10V gate drive. The TO-252 package offers good board-level power dissipation and is widely used in various power circuits.
Compatibility and Differences of the Domestic Alternative (VBE1615):
VBsemi's VBE1615 is a direct pin-to-pin compatible alternative in the same TO-252 package. It shows enhanced performance in key parameters: a slightly higher voltage rating (60V vs. 55V) and a significantly lower on-resistance of 10mΩ at 10V gate drive. Its continuous current rating is also higher at 58A, offering greater margin and lower conduction loss.
Key Application Areas:
Original Model IRLR3915TRPBF: Well-suited for 48V or lower systems requiring dependable switching at currents up to 30A. Typical applications include:
DC-DC converters and voltage regulators.
Motor drives for appliances or small industrial equipment.
Power switches in automotive and industrial controls.
Alternative Model VBE1615: An excellent upgrade path for applications where lower conduction loss, higher current capability (up to 58A), or a slight voltage margin is beneficial. It fits similar applications as the original but can improve efficiency and thermal performance.
Comparative Analysis: BSC028N06NSATMA1 (N-channel) vs. VBGQA1602
This comparison focuses on high-current, low-loss applications where synchronous rectification and high power density are paramount.
Analysis of the Original Model (BSC028N06NSATMA1) Core:
This Infineon MOSFET in a TDSON-8 package is optimized for high-performance SMPS, such as synchronous rectification. Its core strengths are an ultra-low on-resistance of 2.8mΩ at 10V and a very high continuous current of 132A. It features 100% avalanche testing, excellent thermal performance, and is qualified for demanding applications.
Compatibility and Differences of the Domestic Alternative (VBGQA1602):
VBsemi's VBGQA1602, in a DFN8(5x6) package, represents a significant performance leap. While the package differs, it serves as a functional alternative for space-constrained, high-power designs. It boasts an even lower on-resistance of 1.7mΩ at 10V and a staggering continuous current rating of 180A. This makes it ideal for the most demanding high-efficiency, high-current applications.
Key Application Areas:
Original Model BSC028N06NSATMA1: The benchmark for high-efficiency power conversion. Its ultra-low RDS(on) and high current make it ideal for:
Synchronous rectification in server, telecom, and industrial SMPS.
High-current point-of-load (POL) converters.
Motor drives and power stages requiring minimal loss.
Alternative Model VBGQA1602: Targets next-generation designs pushing the limits of power density and efficiency. Its exceptional 1.7mΩ RDS(on) and 180A rating make it suitable for:
Top-tier synchronous rectifiers and high-frequency DC-DC converters.
Ultra-high-current motor drives and inverter modules.
Applications where minimizing conduction loss is critical.
Conclusion
This analysis reveals two distinct upgrade paths:
For the IRLR3915TRPBF, the domestic alternative VBE1615 offers a direct package-compatible replacement with superior electrical parameters—lower RDS(on) and higher current—making it a compelling choice for efficiency improvements in existing TO-252 based designs.
For the high-performance BSC028N06NSATMA1, the domestic alternative VBGQA1602, though in a different package, delivers a dramatic performance enhancement with its ultra-low 1.7mΩ RDS(on) and 180A current capability. It is the premier choice for new designs where maximizing power density and minimizing losses are the primary goals.
The core takeaway is that selection hinges on precise requirement matching. Domestic alternatives like VBE1615 and VBGQA1602 not only provide reliable supply chain options but also offer significant performance gains, giving engineers greater flexibility in design optimization and cost management. Understanding each device's parameter implications is key to unlocking its full potential in your circuit.