In the design of medium to high power circuits, selecting a MOSFET that balances performance, cost, and reliability is a critical task for engineers. This goes beyond simple part substitution—it requires careful consideration of electrical characteristics, thermal management, and supply chain stability. This article takes two widely used MOSFETs, IRLR024NTRLPBF (N-channel) and IRFP3710PBF (N-channel), as benchmarks. We will delve into their design cores and typical applications, and provide a comparative evaluation of two domestic alternative solutions: VBE1695 and VBP1102N. By clarifying their parameter differences and performance orientations, we aim to offer a clear selection guide to help you find the optimal power switching solution for your next design.
Comparative Analysis: IRLR024NTRLPBF (N-channel) vs. VBE1695
Analysis of the Original Model (IRLR024NTRLPBF) Core:
This is a 55V N-channel MOSFET from Infineon, packaged in the surface-mount DPAK (TO-252AA). Its design core is part of the fifth-generation HEXFET technology, which aims to achieve the lowest possible on-resistance per unit silicon area. Key advantages include a robust device design, fast switching speed, and an efficient footprint for surface mounting. It features a continuous drain current (Id) of 17A and an on-resistance (RDS(on)) of 65mΩ at 10V gate drive.
Compatibility and Differences of the Domestic Alternative (VBE1695):
VBsemi's VBE1695 is offered in the same TO-252 package, providing good pin-to-pin compatibility. The main differences are in the electrical parameters: VBE1695 has a slightly higher voltage rating (60V vs. 55V) and a higher continuous current rating (18A vs. 17A). However, its on-resistance is slightly higher at 73mΩ (@10V) compared to the original's 65mΩ.
Key Application Areas:
Original Model IRLR024NTRLPBF: Its balance of voltage, current, and switching performance makes it suitable for various medium-power applications.
DC-DC converters and voltage regulators in 12V/24V/48V systems.
Motor control for small to medium brushed DC motors.
Power management and load switching in industrial controls, automotive subsystems, and consumer electronics.
Alternative Model VBE1695: A viable alternative for applications requiring a slightly higher voltage margin and current capability, where a small increase in conduction loss is acceptable. Suitable for similar application spaces as the original, offering a domestic supply chain option.
Comparative Analysis: IRFP3710PBF (N-channel) vs. VBP1102N
This comparison focuses on higher-power N-channel MOSFETs where low conduction loss and high current handling are paramount.
Analysis of the Original Model (IRFP3710PBF) Core:
This is a 100V, 57A N-channel MOSFET from Infineon in a TO-247AC package. Its design pursues a balance of high voltage capability, high current capacity, and low on-resistance. The key advantage is its robust 25mΩ RDS(on) at 10V gate drive, which minimizes conduction losses in high-current paths. The TO-247 package provides excellent thermal performance for power dissipation.
Compatibility and Differences of the Domestic Alternative (VBP1102N):
VBsemi's VBP1102N is a direct package-compatible alternative in TO-247. It represents a "performance-enhanced" option: it matches the 100V voltage rating but offers significantly better key parameters—a higher continuous current of 72A and a substantially lower on-resistance of 18mΩ (@10V). This translates to potentially lower temperature rise and higher efficiency in demanding applications.
Key Application Areas:
Original Model IRFP3710PBF: An excellent choice for high-current, medium-voltage applications requiring reliability and proven performance.
Switching power supplies (SMPS) and uninterruptible power supplies (UPS).
Motor drives and inverters for industrial equipment, e-bikes, and power tools.
Audio amplifiers and high-power DC-DC conversion stages.
Alternative Model VBP1102N: Ideal for upgrade scenarios or new designs with more stringent requirements for current capability and conduction loss. Its superior RDS(on) and current rating make it suitable for next-generation, higher-efficiency power stages, high-performance motor drives, and applications where thermal management is a critical challenge.
Conclusion
In summary, this analysis reveals two distinct selection pathways:
For medium-power, surface-mount applications, the original IRLR024NTRLPBF offers a proven balance of 55V, 17A, and 65mΩ RDS(on) in a compact DPAK package, making it a reliable workhorse for various power control tasks. Its domestic alternative VBE1695 provides a compatible option with slightly adjusted parameters (60V, 18A, 73mΩ), suitable for applications where supply chain diversification or a minor voltage/current boost is valued.
For high-power, through-hole applications, the original IRFP3710PBF stands as a robust solution with 100V, 57A, and 25mΩ characteristics. The domestic alternative VBP1102N emerges as a compelling performance-driven choice, significantly surpassing the original in both current rating (72A) and on-resistance (18mΩ), enabling higher power density and efficiency for demanding designs.
The core conclusion is that selection is not about absolute superiority but precise requirement matching. In the context of supply chain diversification, domestic alternatives like VBE1695 and VBP1102N not only provide viable backup options but also offer parameter enhancements in key areas, giving engineers greater flexibility and resilience in design trade-offs and cost optimization. Understanding the design philosophy and parameter implications of each device is essential to unlocking its full potential within your circuit.