In modern power design, choosing the right MOSFET involves balancing efficiency, size, cost, and supply chain stability. This article takes two classic MOSFETs—IRLMS2002TRPBF (low-voltage N-channel) and IPP60R125C6 (high-voltage N-channel)—as benchmarks, analyzes their design focus and application scenarios, and evaluates two domestic alternative solutions: VB7322 and VBM16R20. By comparing parameter differences and performance orientations, we provide a clear selection guide to help you find the optimal power switching solution.
Comparative Analysis: IRLMS2002TRPBF (N-channel) vs. VB7322
Analysis of the Original Model (IRLMS2002TRPBF) Core:
This is a 20V N-channel MOSFET from Infineon in a compact SOT-23-6L package. Its design core is to achieve very low on-resistance per silicon area using advanced processing technology, providing high efficiency for battery and load management applications. The Micro6™ package with a custom lead frame enables an RDS(on) 60% lower than similar-sized SOT-23 MOSFETs. Key advantages include a low on-resistance of 30mΩ at 4.5V gate drive, a continuous drain current of 6.5A, and a thermal design that boosts current handling by nearly 300% compared to standard SOT-23.
Compatibility and Differences of the Domestic Alternative (VB7322):
VBsemi's VB7322 is also offered in an SOT23-6 package and serves as a pin-to-pin compatible alternative. The key differences are in electrical parameters: VB7322 has a higher voltage rating (30V vs. 20V) and a slightly lower on-resistance of 27mΩ at 4.5V. The continuous current rating is 6A, comparable to the original's 6.5A.
Key Application Areas:
Original Model IRLMS2002TRPBF: Ideal for space-constrained, efficiency-critical low-voltage applications. Typical uses include:
Load switches and power management in portable/battery-powered devices (e.g., smartphones, tablets, IoT sensors).
DC-DC converter synchronous rectification in low-voltage (e.g., 5V, 12V) systems.
Motor drive control for small brushed DC motors.
Alternative Model VB7322: Suitable for similar compact applications but where a higher voltage margin (30V) is beneficial, or where a slight improvement in conduction loss (lower RDS(on)) is desired within a similar current range.
Comparative Analysis: IPP60R125C6 (N-channel) vs. VBM16R20
Analysis of the Original Model (IPP60R125C6) Core:
This is a 650V N-channel CoolMOS™ C6 series MOSFET from Infineon in a TO-220 package. Its design is based on the revolutionary superjunction (SJ) principle, combining fast switching with ease of use. Core advantages include a high voltage rating of 650V, a continuous drain current of 30A, and an on-resistance of 125mΩ at 10V gate drive. It offers extremely low switching and conduction losses, enabling highly efficient, compact, and cool-running switch-mode power supplies.
Compatibility and Differences of the Domestic Alternative (VBM16R20):
VBsemi's VBM16R20 is offered in a TO-220 package, providing mechanical compatibility. It uses planar technology versus the original's superjunction. Key parameter differences: VBM16R20 has a slightly lower voltage rating (600V vs. 650V) and a significantly lower continuous current rating (20A vs. 30A). Its on-resistance is comparable at 128mΩ (4.5V) / 160mΩ (10V), though measured at different gate voltages.
Key Application Areas:
Original Model IPP60R125C6: Excels in high-efficiency, high-voltage, medium-to-high power switching applications. Typical uses include:
Switch-Mode Power Supplies (SMPS): PFC stages, flyback/forward converters (e.g., for servers, telecom, PC power supplies).
Motor drives and inverters for industrial applications.
Lighting: High-power LED drivers.
Alternative Model VBM16R20: A suitable alternative for applications where the full 650V/30A capability of the original is not required. It fits well in 600V-system SMPS, lower-power motor drives, or other high-voltage switching scenarios where cost optimization is key and a 20A current rating is sufficient.
Conclusion
This analysis reveals two distinct selection paths:
For low-voltage, space-constrained applications, the original IRLMS2002TRPBF, with its optimized Micro6™ package offering very low RDS(on) and robust 6.5A current in a tiny footprint, is a top choice for portable device power management. Its domestic alternative VB7322 provides a compatible option with a higher voltage rating and marginally better on-resistance, suitable for similar compact designs requiring a 30V margin.
For high-voltage, efficiency-critical applications, the original IPP60R125C6 CoolMOS™ C6 sets a high standard with its superjunction technology, offering an excellent balance of 650V rating, 30A current, low RDS(on), and fast switching for advanced SMPS designs. The domestic alternative VBM16R20, using planar technology, offers a cost-effective solution for 600V systems where the current requirement is around 20A.
The core takeaway is that selection depends on precise requirement matching. In the context of supply chain diversification, domestic alternatives like VB7322 and VBM16R20 provide viable, sometimes parameter-enhanced, backup options, giving engineers greater flexibility in design trade-offs and cost control. Understanding each device's design philosophy and parameter implications is key to maximizing its value in your circuit.