In modern power design, selecting the optimal MOSFET involves balancing voltage rating, current handling, switching efficiency, and form factor. This analysis benchmarks two established Infineon MOSFETs—the 150V IRF7815TRPBF and the high-current BSZ010NE2LS5ATMA1—against their domestic alternatives, VBA1158N and VBQF1202, to provide a clear substitution guide.
Comparative Analysis: IRF7815TRPBF (N-channel) vs. VBA1158N
Analysis of the Original Model (IRF7815TRPBF) Core:
This is a 150V N-channel MOSFET in an SO-8 package, designed for efficient power conversion in medium-voltage applications. Its key advantages include a low on-resistance of 43mΩ at 10V VGS, a continuous drain current of 5.1A, and low gate charge for fast switching. It is fully characterized for avalanche ruggedness, with a maximum gate-source voltage rating of ±20V.
Compatibility and Differences of the Domestic Alternative (VBA1158N):
VBsemi's VBA1158N is a pin-to-pin compatible alternative in an SOP8 package. While it matches the 150V drain-source voltage and offers a slightly higher continuous current of 5.4A, its on-resistance is higher at 80mΩ (@10V). This indicates a trade-off: comparable voltage and current ratings but increased conduction loss compared to the original.
Key Application Areas:
Original Model IRF7815TRPBF: Ideal for synchronous rectification in isolated DC-DC converters and notebook processor power supplies where 150V rating, low RDS(on), and proven avalanche performance are critical.
Alternative Model VBA1158N: Suitable as a functional replacement in 150V applications where the higher RDS(on) is acceptable, offering a supply chain alternative with similar voltage and package compatibility.
Comparative Analysis: BSZ010NE2LS5ATMA1 (N-channel) vs. VBQF1202
Analysis of the Original Model (BSZ010NE2LS5ATMA1) Core:
This is a high-performance 25V N-channel MOSFET in a TSDSON-8FL package, optimized for high-current buck converters. Its core strength is an extremely low on-resistance of 1.3mΩ at 4.5V VGS, enabling a very high continuous drain current of 212A. It features 100% avalanche testing, excellent thermal performance, and is halogen-free per IEC 61249-2-21.
Compatibility and Differences of the Domestic Alternative (VBQF1202):
VBsemi's VBQF1202, in a DFN8(3x3) package, is a compelling alternative. It offers a similar low on-resistance of 2.5mΩ (@4.5V) and 2mΩ (@10V), with a robust continuous current rating of 100A. While its current rating is lower than the original's 212A, its RDS(on) is still very competitive for a wide range of high-current applications.
Key Application Areas:
Original Model BSZ010NE2LS5ATMA1: The premier choice for high-performance, high-current point-of-load (POL) buck converters, server VRMs, and any circuit demanding ultra-low conduction loss and maximum current capability in a compact footprint.
Alternative Model VBQF1202: An excellent substitute for high-current DC-DC conversion (e.g., in computing, telecom) where an optimal balance of very low RDS(on), high current (100A), and a thermally enhanced DFN package is required, providing a strong performance and cost-effective solution.
Conclusion:
The selection path is defined by application priorities. For 150V synchronous rectification, the IRF7815TRPBF offers superior low RDS(on), while VBA1158N provides a compatible alternative with a higher RDS(on). For ultra-high-current, low-voltage switching, the BSZ010NE2LS5ATMA1 sets a benchmark with its extreme current and RDS(on) specs, whereas the VBQF1202 emerges as a powerful and practical alternative for many demanding 20-25V, high-current applications. Domestic alternatives like VBA1158N and VBQF1202 enhance design resilience, offering viable, performance-oriented options for supply chain diversification and cost optimization.