MOSFET Selection for Medium-Voltage Switching and High-Current Applications: IRF
In modern power design, choosing the right MOSFET involves balancing voltage capability, current handling, switching efficiency, and cost. This article takes two distinct MOSFETs from Infineon—the medium-voltage IRF5802TRPBF and the high-current BSZ0901NS—as benchmarks. We will analyze their design focus and typical applications, then compare them with two domestic alternative solutions, VB7101M and VBQF1302. By clarifying parameter differences and performance orientations, we provide a clear selection guide to help you find the optimal power switching solution for your next project.
Comparative Analysis: IRF5802TRPBF (N-channel) vs. VB7101M
Analysis of the Original Model (IRF5802TRPBF) Core:
This is a 150V N-channel MOSFET from Infineon in a compact TSOP-6 package. Its design core is to provide reliable switching in medium-voltage, lower-current applications. Key advantages include a high drain-source voltage rating of 150V and a continuous drain current of 900mA. Its on-resistance is 1.2Ω at a 10V gate drive.
Compatibility and Differences of the Domestic Alternative (VB7101M):
VBsemi's VB7101M is an N-channel MOSFET in an SOT23-6 package. The main differences are in electrical parameters: VB7101M has a lower voltage rating (100V) but offers significantly better conduction performance. Its on-resistance is as low as 95mΩ @10V, and it supports a much higher continuous current of 3.2A.
Key Application Areas:
Original Model IRF5802TRPBF: Suitable for medium-voltage switching where current demand is below 1A, such as in offline auxiliary power supplies, relay driving, or signal isolation circuits.
Alternative Model VB7101M: Ideal for applications requiring higher current capability and lower conduction loss within a 100V range, such as low-side switches in DC-DC converters, motor drivers for small fans, or power management in portable devices.
Comparative Analysis: BSZ0901NS (N-channel) vs. VBQF1302
This comparison shifts to ultra-high-current, low-voltage switching. The design pursuit here is minimizing conduction loss in high-power density applications.
Analysis of the Original Model (BSZ0901NS) Core:
This Infineon MOSFET features an extremely low on-resistance of 1.7mΩ at 10V and an exceptionally high continuous drain current rating of 145A, housed in a thermally efficient TSDSON-8FL package. Its core advantage is enabling high-efficiency power conversion in space-constrained, high-current paths.
Compatibility and Differences of the Domestic Alternative (VBQF1302):
VBsemi's VBQF1302, in a DFN8(3x3) package, presents a highly competitive alternative. It matches the 30V voltage rating and offers a robust 70A continuous current. Crucially, it achieves an even lower on-resistance of 2mΩ @10V, providing excellent conduction performance.
Key Application Areas:
Original Model BSZ0901NS: Its ultra-low RDS(on) and massive current rating make it suited for the most demanding high-current points, such as synchronous rectification in high-power server VRMs, motor drives in power tools, or battery protection switches in high-capacity systems.
Alternative Model VBQF1302: An excellent choice for high-current applications where a balance of performance, size, and cost is key. It is well-suited for synchronous buck converters in computing, motor drives in robotics, and load switches in telecom/power systems.
Conclusion
This analysis reveals two clear selection paths based on application needs:
For medium-voltage (100-150V), lower-current switching, the original IRF5802TRPBF offers a high voltage safety margin. Its domestic alternative, VB7101M, provides a compelling upgrade in current handling (3.2A) and significantly lower on-resistance for applications within 100V, enabling higher efficiency in suitable circuits.
For low-voltage, ultra-high-current applications, the original BSZ0901NS sets a benchmark with its 145A rating. The domestic alternative VBQF1302 offers a strong balance with 70A current capability and remarkably low 2mΩ RDS(on), making it a powerful and often more accessible choice for next-generation high-efficiency power stages.
The core conclusion is that selection hinges on precise requirement matching. Domestic alternatives like VB7101M and VBQF1302 not only provide reliable supply chain options but also deliver competitive or enhanced performance in key parameters, giving engineers greater flexibility in design and cost optimization.