In the design of modern power systems, achieving optimal efficiency, reliability, and power density requires precise MOSFET selection tailored to specific topologies and voltage domains. This is not a simple part substitution but a strategic balance between switching performance, conduction losses, ruggedness, and cost. This article takes two highly representative MOSFETs from Infineon—the high-voltage IPW60R070CFD7 (N-channel) and the low-voltage dual-channel BSL215CH6327 (N+P)—as benchmarks. It delves into their design cores and application scenarios, while providing a comparative evaluation of their Chinese alternative solutions: VBP165R36SFD and VB5222. By clarifying parameter differences and performance orientations, we aim to offer a clear selection map to help you find the most matching power switching solution in your next design.
Comparative Analysis: IPW60R070CFD7 (N-channel) vs. VBP165R36SFD
Analysis of the Original Model (IPW60R070CFD7) Core:
This is a 650V N-channel MOSFET from Infineon in a TO-247-3 package. It is built on the revolutionary CoolMOS™ CFD7 technology, based on the Superjunction (SJ) principle. This latest generation, the successor to the CFD2 series, is a platform optimized for soft-switching applications like Phase-Shift Full-Bridge (ZVS) and LLC resonant converters. Its design core is to deliver the highest efficiency in resonant topologies by featuring reduced gate charge (Qg), best-in-class reverse recovery charge (Qrr), and improved turn-off behavior. As part of Infineon's fast body diode portfolio, it combines all benefits of fast-switching technology with excellent hard-commutation robustness without compromising design ease. With key parameters like a continuous drain current (Id) of 31A and an on-resistance (RDS(on)) of 70mΩ @10V, the CFD7 technology meets the highest standards for efficiency and reliability, enabling high-power-density solutions—making resonant switch-mode topologies more efficient, reliable, lighter, and cooler.
Compatibility and Performance of the Domestic Alternative (VBP165R36SFD):
VBsemi's VBP165R36SFD is a direct pin-to-pin compatible alternative in the TO247 package. It is also a Single N-channel, Superjunction Multi-EPI MOSFET rated for 650V. The key parameters show a strong performance match and even slight enhancements: it offers a similar RDS(on) of 68mΩ @10V and a higher continuous drain current of 36A. This indicates that VBP165R36SFD can provide comparable conduction losses with a greater current handling margin, making it a viable and potentially upgraded alternative for the same application space.
Key Application Areas:
Original Model IPW60R070CFD7: Ideal for high-efficiency, high-power-density soft-switching power supplies. Its optimized Qg and Qrr make it a top choice for:
Server & Telecom SMPS (LLC resonant half-bridge, phase-shifted full-bridge).
High-end LED drivers and TV power supplies.
Solar inverters and UPS systems requiring robust fast body diodes.
Alternative Model VBP165R36SFD: Perfectly suited as a drop-in replacement or new design choice for the same high-voltage resonant and soft-switching applications. Its slightly lower RDS(on) and higher current rating (36A vs. 31A) can offer margin for improved thermal performance or handling higher power levels in similar 650V circuits like LLC converters and PFC stages.
Comparative Analysis: BSL215CH6327 (N+P channel) vs. VB5222
This dual N+P channel MOSFET addresses a different need: compact, integrated power management and load switching in low-voltage systems.
Analysis of the Original Model (BSL215CH6327) Core:
This Infineon component integrates one N-channel and one P-channel MOSFET in a space-saving TSOP-6 package. Rated at 20V with a continuous drain current of 1.5A for each channel, its design core is to provide a simple, compact solution for level translation, load switching, and complementary push-pull stages. With an on-resistance of 150mΩ @4.5V, it balances size and performance for low-to-medium current applications.
Compatibility and Advantages of the Domestic Alternative (VB5222):
VBsemi's VB5222 is a direct pin-to-pin compatible alternative in the SOT23-6 package, also integrating Dual N+P channels rated at ±20V. It presents a significant performance enhancement across key parameters:
Lower On-Resistance: Dramatically reduced to 30mΩ (N-ch) and 79mΩ (P-ch) @4.5V, and 22mΩ (N-ch) / 55mΩ (P-ch) @10V.
Higher Current Capability: Increased to 5.5A (N-ch) and 3.4A (P-ch) continuous drain current.
Key Application Areas:
Original Model BSL215CH6327: Suitable for space-constrained, low-current switching and interface circuits, such as:
Power management in portable devices (load switches, battery protection).
Level shifters for communication interfaces (I2C, SPI).
Simple motor control for small actuators.
Alternative Model VB5222: An excellent upgraded choice for applications requiring much lower conduction losses and higher current capacity in a similarly compact footprint. It is ideal for:
More efficient load switches and power path management in battery-powered devices.
Higher-current gate driving circuits or push-pull outputs.
Compact DC-DC converter modules where lower RDS(on) directly improves efficiency.
Conclusion:
This analysis reveals two distinct selection pathways based on voltage domain and integration needs:
For high-voltage (650V) resonant converter applications, the original IPW60R070CFD7 sets a high benchmark with its optimized CFD7 technology for soft-switching efficiency and robustness. Its domestic alternative, VBP165R36SFD, offers a compelling, pin-compatible replacement with virtually identical RDS(on) (68mΩ vs. 70mΩ) and a higher current rating (36A vs. 31A), providing a reliable and potentially enhanced option for LLC, PFC, and other soft-switching topologies.
For low-voltage, integrated dual N+P channel applications, the original BSL215CH6327 provides a basic compact solution. However, its domestic alternative, VB5222, stands out as a superior performance upgrade. It offers drastically lower on-resistance and significantly higher current capability in a similarly small package (SOT23-6), making it an excellent choice for designers seeking to minimize losses and increase power handling in space-constrained low-voltage circuits.
The core takeaway is that selection hinges on precise requirement matching. In the context of supply chain diversification, domestic alternatives like VBP165R36SFD and VB5222 not only provide viable backup options but also deliver parameter matching or significant performance gains. This offers engineers greater flexibility and resilience in design trade-offs, cost control, and performance optimization. Understanding the design philosophy and parameter implications of each device is key to unlocking its full potential in your circuit.