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MOSFET Selection for High-Power and Miniature Circuits: BSC037N08NS5, IRLMS6802T
time:2025-12-23
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In modern power design, engineers must balance high-current handling, switching efficiency, and board space. This article takes two classic MOSFETs—BSC037N08NS5 (N-channel) and IRLMS6802TRPBF (P-channel)—as benchmarks, dissects their design focus and typical applications, and compares them with domestic alternatives VBGQA1803 and VB8338. By clarifying parameter differences and performance orientation, we provide a clear selection guide for your next power switching solution.
Comparative Analysis: BSC037N08NS5 (N-channel) vs. VBGQA1803
Analysis of the Original Model (BSC037N08NS5) Core:
This Infineon N-channel MOSFET in TDSON-8 (5x6) package is designed for high-power density and efficiency in medium-voltage applications. Its key strengths are: very low on-resistance of 3.7mΩ at 10V gate drive, continuous drain current rating of 84A, and 80V drain-source voltage capability. This combination ensures minimal conduction loss and robust performance in demanding circuits.
Compatibility and Differences of the Domestic Alternative (VBGQA1803):
VBsemi’s VBGQA1803 offers a pin-to-pin compatible DFN8 (5x6) package. It significantly enhances key parameters: same 80V rating, but higher continuous current (140A) and lower on-resistance (2.65mΩ @10V). This represents a performance‑upgrade alternative with superior current handling and reduced conduction loss.
Key Application Areas:
Original Model BSC037N08NS5: Ideal for high‑efficiency, medium‑power applications such as:
- Synchronous rectification in 48V/60V DC‑DC converters (e.g., server, telecom power supplies).
- Motor drives for e‑bikes, drones, or industrial tools.
- High‑current load switches and power distribution circuits.
Alternative Model VBGQA1803: Suited for upgrade scenarios demanding higher current capability and lower on‑state loss, e.g., next‑generation high‑power DC‑DC converters, motor drives requiring higher peak current, or applications where thermal performance is critical.
Comparative Analysis: IRLMS6802TRPBF (P-channel) vs. VB8338
This comparison focuses on P‑channel MOSFETs optimized for space‑constrained, low‑voltage power management.
Analysis of the Original Model (IRLMS6802TRPBF) Core:
Infineon’s IRLMS6802TRPBF is a P‑channel MOSFET in a compact SOT‑23‑6L package. It offers a good balance of size and performance: -20V drain‑source voltage, -5.6A continuous current, and 50mΩ on‑resistance at -4.5V gate drive. Its small footprint and adequate switching characteristics make it a popular choice for portable electronics.
Compatibility and Differences of the Domestic Alternative (VB8338):
VBsemi’s VB8338 is a direct pin‑to‑pin replacement in SOT23‑6 package. It provides a higher voltage rating (-30V) and comparable on‑resistance (54mΩ @-4.5V; 49mΩ @-10V) with a similar continuous current rating (-4.8A). This makes it a robust alternative for designs requiring extra voltage margin without sacrificing package size.
Key Application Areas:
Original Model IRLMS6802TRPBF: Excellent for miniaturized, battery‑powered applications:
- Load switching and power‑path management in smartphones, tablets, IoT devices.
- Battery protection circuits and low‑voltage DC‑DC conversion.
- Space‑constrained high‑side switching in 5V/12V systems.
Alternative Model VB8338: A suitable replacement for applications that benefit from higher voltage withstand capability (-30V) while maintaining similar current and footprint, such as power management in industrial portable devices or automotive accessory modules.
Conclusion
This analysis reveals two distinct selection paths:
- For high‑power N‑channel applications, the original BSC037N08NS5 delivers strong performance with 3.7mΩ on‑resistance and 84A current capability. Its domestic alternative VBGQA1803 offers a significant performance boost—lower resistance (2.65mΩ) and higher current (140A)—making it an excellent upgrade choice for designs prioritizing efficiency and power density.
- For compact P‑channel solutions, the original IRLMS6802TRPBF balances small size and adequate switching performance. The alternative VB8338 provides higher voltage rating (-30V) with similar on‑resistance and package, offering a reliable, margin‑enhanced replacement for space‑sensitive designs.
The core insight: selection depends on precise requirement matching. Domestic alternatives not only provide supply‑chain resilience but also enable performance upgrades or cost‑effective replacements, giving engineers greater flexibility in power‑design trade‑offs.
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