In modern electronic design, selecting the right MOSFET for signal-level switching and compact power management is crucial for optimizing circuit performance, size, and cost. This article takes two representative MOSFETs from Nexperia—the dual N-channel 2N7002PS,115 for signal applications and the power-focused PMPB08R6ENX—as benchmarks. We will analyze their design cores, key parameters, and typical use cases, then evaluate their direct pin-to-pin alternatives from VBsemi: VBK362K and VBQG7313. This comparison aims to provide a clear selection guide for engineers navigating the trade-offs between performance, footprint, and supply chain diversity.
Comparative Analysis: 2N7002PS,115 (Dual N-Channel) vs. VBK362K
Analysis of the Original Model (2N7002PS,115) Core:
This is a dual N-channel MOSFET from Nexperia in an ultra-compact SC-88 (SOT-363) package. It is designed for low-power signal switching and interface control where board space is at a premium. Its key strengths are a 60V drain-source voltage (Vdss) rating and a continuous drain current (Id) of 320mA per channel. With an on-resistance (RDS(on)) of 1Ω at 10V gate drive, it offers reliable performance for load switching within its current range.
Compatibility and Differences of the Domestic Alternative (VBK362K):
VBsemi's VBK362K is a direct pin-to-pin compatible dual N-channel MOSFET in an SC70-6 package, similar in footprint to the SC-88. The primary differences are in electrical parameters: while it matches the 60V Vdss rating, its continuous current rating is slightly lower at 300mA (compared to 320mA). Its on-resistance is specified as 2.5Ω at 10V gate drive, which is higher than the original's 1Ω. This indicates the original part may have lower conduction losses in similar applications.
Key Application Areas:
Original Model 2N7002PS,115: Ideal for space-constrained, low-current signal switching applications such as:
GPIO (General-Purpose Input/Output) port expansion and level shifting.
Switching in sensor interfaces, data buses (I2C, SPI), or audio signal paths.
Load switching for LEDs or other peripherals in portable and IoT devices.
Alternative Model VBK362K: Serves as a functional replacement in similar dual N-channel signal switching circuits where the 60V rating is required, but the slightly higher RDS(on) and lower current rating are acceptable for the specific load.
Comparative Analysis: PMPB08R6ENX (N-channel) vs. VBQG7313
This comparison shifts to power management in compact spaces. The Nexperia PMPB08R6ENX is designed for high-current switching in a minimal DFN2020MD-6 package.
Analysis of the Original Model (PMPB08R6ENX) Core:
This single N-channel MOSFET excels in delivering high current with low loss in a tiny footprint. Its core advantages are a low on-resistance of 10.5mΩ at 10V gate drive and a high continuous drain current of 11A at a 30V Vdss rating. This combination makes it highly efficient for power path management and switching in dense layouts.
Compatibility and Differences of the Domestic Alternative (VBQG7313):
VBsemi's VBQG7313 is a direct pin-to-pin compatible alternative in a DFN6(2x2) package. It presents a compelling "performance-enhanced" profile: it matches the 30V Vdss rating but offers a higher continuous current of 12A and a significantly lower on-resistance of 20mΩ at 10V (and 24mΩ at 4.5V). This suggests potentially lower conduction losses and better thermal performance under similar operating conditions.
Key Application Areas:
Original Model PMPB08R6ENX: Perfect for high-efficiency, space-critical power switching, such as:
Load switches and power distribution in smartphones, tablets, and wearables.
Battery protection circuits and discharge path management in single-cell Li-ion applications.
High-side or low-side switching in compact DC-DC converters.
Alternative Model VBQG7313: An excellent upgrade choice for applications requiring the same or slightly higher current with the benefit of lower on-resistance. It is suitable for the same compact power management scenarios, potentially offering improved efficiency and thermal margins.
Conclusion:
This analysis outlines two distinct replacement strategies:
For dual N-channel signal-level switching, the original 2N7002PS,115 offers a balance of 60V rating and 320mA current in a minuscule package. The alternative VBK362K provides pin-compatible replacement with a similar voltage rating but with parameters tailored for slightly less demanding current needs.
For compact, high-current power switching, the original PMPB08R6ENX delivers 11A capability with 10.5mΩ RDS(on) in a DFN2020 package. Its alternative, VBQG7313, emerges as a strong performance contender, offering higher current (12A) and lower on-resistance (20mΩ), making it suitable for applications where efficiency and thermal performance are priorities.
The core takeaway is that selection depends on precise requirement matching. Domestic alternatives like VBK362K and VBQG7313 provide not only supply chain resilience but also opportunities for parameter optimization, giving engineers greater flexibility in their design and cost decisions. Understanding the specific performance profile of each device is key to leveraging its full potential in the circuit.