In modern power design, achieving optimal efficiency and thermal performance in a compact footprint is a critical challenge. Selecting the right MOSFET involves balancing on-resistance, current handling, switching speed, and package size. This article uses two representative MOSFETs from DIODES, the DMT36M1LPS-13 (N-channel) and DMP2110UVT-13 (Dual P-channel), as benchmarks. We will analyze their design cores and application scenarios, and comparatively evaluate two domestic alternative solutions: VBGQA1305 and VB4290. By clarifying parameter differences and performance orientations, this provides a clear selection map to help you find the most matching power switching solution.
Comparative Analysis: DMT36M1LPS-13 (N-channel) vs. VBGQA1305
Analysis of the Original Model (DMT36M1LPS-13) Core:
This is a 30V N-channel MOSFET from DIODES in a PowerDI5060-8 package. Its design core is to minimize conduction loss while maintaining excellent switching performance. Key advantages are: a very low on-resistance of 4.8mΩ at a 10V gate drive and a high continuous drain current rating of 65A. This makes it ideal for high-current, high-efficiency power conversion stages.
Compatibility and Differences of the Domestic Alternative (VBGQA1305):
VBsemi's VBGQA1305 is an N-channel MOSFET in a DFN8(5x6) package. While not necessarily pin-to-pin identical, it serves as a functional alternative for similar applications. Its key parameters show a comparable voltage rating (30V) and an impressively low on-resistance of 4.4mΩ at 10V, slightly better than the original. However, its continuous current rating is 45A, which is lower than the original's 65A.
Key Application Areas:
Original Model DMT36M1LPS-13: With its ultra-low RDS(on) and high 65A current capability, it is perfectly suited for high-current DC-DC synchronous rectification, high-efficiency point-of-load (POL) converters, and motor drives in 12V/24V systems where minimizing conduction loss is paramount.
Alternative Model VBGQA1305: An excellent choice for applications requiring very low on-resistance but where the full 65A current is not needed. Its 45A rating and superior 4.4mΩ RDS(on) make it a strong, efficient alternative for many synchronous buck converters and medium-to-high current power switches.
Comparative Analysis: DMP2110UVT-13 (Dual P-channel) vs. VB4290
This comparison focuses on space-constrained, low-voltage dual P-channel switches for power management and load switching.
Analysis of the Original Model (DMP2110UVT-13) Core:
This DIODES component integrates two 20V P-channel MOSFETs in a tiny TSOT-26 package. Its design pursues compact integration for load switching and signal routing. Key features include a 1.8A continuous current per channel and an on-resistance of 240mΩ at a low 1.8V gate drive, making it efficient for battery-powered, logic-level controlled applications.
Compatibility and Differences of the Domestic Alternative (VB4290):
VBsemi's VB4290 is a dual P-channel MOSFET in a SOT23-6 package. It serves as a compact alternative. It offers a similar -20V voltage rating. Its key advantage is significantly lower on-resistance: 100mΩ at 2.5V and 75mΩ at 4.5V, vastly superior to the original's 240mΩ. It also supports a higher continuous current of -4A per channel.
Key Application Areas:
Original Model DMP2110UVT-13: Ideal for ultra-compact space where dual P-channel switches are needed for load switching, power domain isolation, or signal multiplexing in portable devices, IoT modules, and battery management circuits, especially when driven directly from low-voltage logic (e.g., 1.8V).
Alternative Model VB4290: A performance-enhanced alternative for applications requiring lower conduction loss and higher current capacity in a still very small package. It is excellent for load switches, power path management, and OR-ing circuits in 5V/12V systems where efficiency and thermal performance are improved over the original.
Conclusion
This analysis reveals two distinct selection paths:
For high-current N-channel applications, the original DMT36M1LPS-13 offers an outstanding balance of 4.8mΩ RDS(on) and 65A current in a thermally capable package. The domestic alternative VBGQA1305 provides a compelling option with even lower on-resistance (4.4mΩ) for designs where the 45A current rating is sufficient, offering potential efficiency gains.
For integrated dual P-channel switching in tight spaces, the original DMP2110UVT-13 excels in minimal footprint with logic-level drive. The domestic alternative VB4290 stands out as a major performance upgrade, offering much lower on-resistance and higher current capability, making it suitable for more demanding load switching tasks.
The core conclusion is that selection hinges on precise requirement matching. Domestic alternatives like VBGQA1305 and VB4290 not only provide viable backups but also offer parameter enhancements in key areas, giving engineers greater flexibility in design trade-offs, performance optimization, and cost control within a diversified supply chain.