In modern power design, selecting the right MOSFET involves balancing voltage, current, on-resistance, and package to achieve optimal efficiency and reliability. This article takes two representative MOSFETs—DMP4026LSD-13 (Dual P‑Channel) and DMTH6004SK3-13 (N‑Channel)—as benchmarks, analyzes their design focus and application scenarios, and evaluates two domestic alternative solutions, VBA4625 and VBGE1603. By comparing parameter differences and performance orientations, we provide a clear selection guide to help you find the most suitable power‑switching solution.
Comparative Analysis: DMP4026LSD‑13 (Dual P‑Channel) vs. VBA4625
Analysis of the Original Model (DMP4026LSD‑13) Core:
This is a 40V dual P‑channel MOSFET from DIODES in an SO‑8 package. It is designed for space‑sensitive applications requiring moderate current handling. Key advantages include a continuous drain current of 6.5A and an on‑resistance of 45mΩ at 4.5V gate drive. With a power dissipation of 1.7W, it offers a reliable solution for dual high‑side switching in compact layouts.
Compatibility and Differences of the Domestic Alternative (VBA4625):
VBsemi’s VBA4625 is also offered in an SOP8 package and is a pin‑to‑pin compatible alternative. The main differences are in electrical parameters: VBA4625 features a higher voltage rating (-60V) and significantly lower on‑resistance—30mΩ at 4.5V and 20mΩ at 10V. However, its continuous current rating is -8.5A, which is higher than the original’s 6.5A, providing better conduction performance in similar voltage applications.
Key Application Areas:
Original Model DMP4026LSD‑13: Suitable for 12V–24V systems where dual P‑channel switching is needed with moderate current demand, such as:
- Power‑management switches in consumer electronics.
- High‑side load switches in battery‑operated devices.
- Compact DC‑DC converters requiring dual‑switch integration.
Alternative Model VBA4625: Ideal for applications requiring higher voltage margin (-60V) and lower conduction loss, such as industrial power‑management circuits or automotive auxiliary systems where efficiency and voltage robustness are critical.
Comparative Analysis: DMTH6004SK3‑13 (N‑channel) vs. VBGE1603
Analysis of the Original Model (DMTH6004SK3‑13) Core:
This is a 60V N‑channel MOSFET in a TO‑252 (DPAK) package, designed to minimize on‑resistance while maintaining excellent switching performance. Its key strengths are a very low RDS(on) of 3.8mΩ at 10V (measured at 90A) and a high continuous drain current of 100A. This makes it an efficient choice for high‑current power‑management applications.
Compatibility and Differences of the Domestic Alternative (VBGE1603):
VBsemi’s VBGE1603 is also packaged in TO‑252 and offers direct pin‑to‑pin compatibility. It provides a performance enhancement: the same 60V voltage rating, but a higher continuous current of 120A and even lower on‑resistance—4mΩ at 4.5V and 3.4mΩ at 10V. This translates to reduced conduction losses and higher current‑handling capability.
Key Application Areas:
Original Model DMTH6004SK3‑13: Excellent for high‑efficiency, high‑current applications such as:
- Synchronous rectification in 48V DC‑DC converters.
- Motor drives for industrial equipment or electric vehicles.
- High‑power load switches and power‑distribution systems.
Alternative Model VBGE1603: Suited for upgrade scenarios demanding higher current capacity (up to 120A) and lower on‑resistance, such as next‑generation high‑density power supplies, advanced motor‑drive systems, or any application where thermal performance and efficiency are paramount.
Summary
This comparison reveals two distinct selection paths:
- For dual P‑channel applications in space‑constrained designs, the original DMP4026LSD‑13 provides a balanced solution with 40V rating and 6.5A current capability. Its domestic alternative VBA4625 offers higher voltage rating (-60V), lower on‑resistance, and higher current (-8.5A), making it a superior choice for applications requiring enhanced voltage margin and conduction efficiency.
- For high‑current N‑channel applications, the original DMTH6004SK3‑13 delivers outstanding performance with 3.8mΩ RDS(on) and 100A current. The domestic alternative VBGE1603 steps further with 120A current and 3.4mΩ RDS(on), providing a performance‑boosted option for designs that prioritize maximum current handling and minimal conduction loss.
The core conclusion is that selection depends on precise requirement matching. Domestic alternatives not only serve as reliable backups but also offer parameter advancements, giving engineers greater flexibility in design trade‑offs and cost control. Understanding each device’s design philosophy and parameter implications is key to leveraging its full value in the circuit.