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MOSFET Selection for Compact Power Applications: DMP1045U-7, DMN2024U-13 vs. China Alternatives VB2355, VB1240
time:2025-12-22
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In the pursuit of device miniaturization and high efficiency, selecting the right MOSFET for a compact circuit board is a key challenge for engineers. This involves careful trade-offs among performance, size, cost, and supply chain resilience. This article uses two representative MOSFETs, DMP1045U-7 (P-channel) and DMN2024U-13 (N-channel), as benchmarks, analyzes their design cores and application scenarios, and evaluates the domestic alternative solutions VB2355 and VB1240. By clarifying parameter differences and performance orientations, we provide a clear selection map to help you find the optimal power switching solution.
Comparative Analysis: DMP1045U-7 (P-channel) vs. VB2355
Analysis of the Original Model (DMP1045U-7) Core:
This is a 12V P-channel MOSFET from DIODES in a compact SOT-23 package. Its design core is to minimize conduction loss while maintaining excellent switching performance. Key advantages include a low on-resistance of 31mΩ at 4.5V gate drive and a continuous drain current of 5.2A, making it highly suitable for efficient power management in space-constrained applications.
Compatibility and Differences of the Domestic Alternative (VB2355):
VBsemi's VB2355 is offered in a compatible SOT23-3 package. The main differences are in electrical parameters: VB2355 has a higher voltage rating (-30V) but a higher on-resistance of 54mΩ at 4.5V and a lower continuous current rating of -5.6A compared to the original.
Key Application Areas:
Original Model DMP1045U-7: Ideal for 12V system load switches, power path management in battery-powered devices (e.g., single-cell Li-ion), and space-limited DC-DC conversion where low RDS(on) and good current capability are critical.
Alternative Model VB2355: More suitable for P-channel applications requiring a higher voltage margin (up to -30V) but with moderate current demands (within 5.6A).
Comparative Analysis: DMN2024U-13 (N-channel) vs. VB1240
Analysis of the Original Model (DMN2024U-13) Core:
This 20V N-channel MOSFET from DIODES, in an SOT-23-3 package, is designed to minimize on-resistance while maintaining strong switching performance. Its key advantages are a low RDS(on) of 29mΩ at 2.5V gate drive and a continuous drain current of 6.8A, making it excellent for efficient power management.
Compatibility and Differences of the Domestic Alternative (VB1240):
VBsemi's VB1240 is a pin-to-pin compatible alternative in SOT23-3. It matches the 20V voltage rating. While its RDS(on) at 4.5V (28mΩ) is comparable, its RDS(on) at 2.5V is higher (42mΩ), and its continuous current rating is slightly lower at 6A.
Key Application Areas:
Original Model DMN2024U-13: An ideal choice for low-voltage DC-DC synchronous rectification (e.g., in 5V/12V systems), load switching, and motor drive in portable electronics where efficiency and compact size are priorities.
Alternative Model VB1240: A suitable alternative for similar 20V applications where the specific gate drive conditions align with its performance characteristics and a slight reduction in current rating is acceptable.
Conclusion:
The selection between these models depends on precise requirement matching. For P-channel applications in compact 12V systems prioritizing low RDS(on) and current, the DMP1045U-7 is a strong choice, with VB2355 offering a higher-voltage alternative. For N-channel applications in 20V systems focusing on efficiency, the DMN2024U-13 provides excellent performance, with VB1240 serving as a viable compatible alternative. Domestic models offer flexible options for design trade-offs and supply chain resilience, and understanding each device's parameters is key to maximizing circuit value.
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