In modern power design, balancing performance, size, and cost is key. This article compares two efficient MOSFETs—DMN10H170SVT-13 (N-channel) and DMP3085LSD-13 (P-channel)—with their domestic alternatives VB7101M and VBA4338. We’ll analyze their core specs and applications to help you choose the best fit for your next project.
Comparative Analysis: DMN10H170SVT-13 (N-channel) vs. VB7101M
Analysis of the Original Model (DMN10H170SVT-13) Core:
This DIODES N-channel MOSFET in a compact TSOT-26 package is built for high-voltage, low-current switching. It features a 100V drain-source voltage (Vdss), a continuous drain current (Id) of 2.6A, and an on-resistance (RDS(on)) of 160mΩ at 10V. Its design focuses on reliable performance in space-constrained, medium-voltage applications.
Compatibility and Differences of the Domestic Alternative (VB7101M):
VBsemi’s VB7101M, in an SOT23-6 package, offers a pin-to-pin compatible alternative with enhanced conduction performance. It matches the 100V Vdss but provides a lower RDS(on) of 95mΩ at 10V and a higher continuous current of 3.2A. This results in reduced conduction losses and better current handling.
Key Application Areas:
- Original Model DMN10H170SVT-13: Ideal for compact 100V systems requiring moderate current switching, such as power management in industrial controls, lighting, or auxiliary power supplies.
- Alternative Model VB7101M: Suited for upgrades where lower on-resistance and higher current capability are needed, like in efficient DC-DC converters or motor drives within 100V systems.
Comparative Analysis: DMP3085LSD-13 (P-channel) vs. VBA4338
Analysis of the Original Model (DMP3085LSD-13) Core:
This P-channel MOSFET from DIODES in an SO-8 package minimizes on-resistance while maintaining excellent switching performance. With a Vdss of -30V, Id of -3.9A, and RDS(on) of 70mΩ at 10V (95mΩ at 4.5V), it’s optimized for efficient power management in low-voltage applications.
Compatibility and Differences of the Domestic Alternative (VBA4338):
VBsemi’s VBA4338 is a dual P+P MOSFET in an SOP8 package, offering direct compatibility with significant performance gains. It matches the -30V Vdss but features a much lower RDS(on) of 35mΩ at 10V (45mΩ at 4.5V) and a higher continuous current of -7.3A. This ensures lower power dissipation and improved efficiency.
Key Application Areas:
- Original Model DMP3085LSD-13: Excellent for high-efficiency power management, such as load switching, battery protection, or DC-DC conversion in 12V/24V systems where compact size and low loss are critical.
- Alternative Model VBA4338: Ideal for demanding applications requiring higher current capacity and minimal conduction loss, like advanced power path management, high-current load switches, or motor drives in similar voltage ranges.
Conclusion:
This comparison highlights two tailored paths: For N-channel needs in medium-voltage, compact designs, the original DMN10H170SVT-13 offers reliable performance, while VB7101M provides an upgrade with lower resistance and higher current. For P-channel applications prioritizing efficiency, DMP3085LSD-13 delivers balanced performance, and VBA4338 stands out with superior conduction and current handling for more demanding scenarios.
Selection depends on precise requirement matching. Domestic alternatives like VB7101M and VBA4338 not only offer reliable backups but also enable performance enhancements, giving engineers greater flexibility in design and cost optimization for resilient power solutions.