Comparative Analysis: DMN10H170SFG-7 (N-channel) vs. VBQF1101M
Analysis of the Original Model (DMN10H170SFG-7) Core:
This is a 100V N-channel MOSFET from DIODES in a PowerDI3333-8 package. Its design core is to minimize on-resistance while maintaining excellent switching performance for efficient power management. Key advantages are a 100V drain-source voltage rating, a continuous drain current of 2.9A, and an on-resistance of 122mΩ at 10V gate drive.
Compatibility and Differences of the Domestic Alternative (VBQF1101M):
VBsemi's VBQF1101M uses a DFN8(3x3) package. The main differences lie in the electrical parameters: VBQF1101M offers a similar 100V rating and ±20V gate-source voltage. Its on-resistance is 130mΩ at 10V, slightly higher than the original, but it provides a higher continuous current rating of 4A.
Key Application Areas:
Original Model DMN10H170SFG-7: Suitable for 100V applications requiring a balance of voltage rating, moderate current (2.9A), and switching performance, such as auxiliary power switches or low-power DC-DC conversion.
Alternative Model VBQF1101M: A compatible alternative for applications needing a similar 100V rating but with a slightly higher current capability up to 4A, useful for designs requiring a marginal current upgrade.
Comparative Analysis: DMN10H099SFG-7 (N-channel) vs. VBQF1104N
This N-channel MOSFET focuses on achieving lower on-resistance within the same 100V class.
The core advantages of the original model (DMN10H099SFG-7) are:
Improved conduction performance: An on-resistance of 80mΩ at 10V, lower than the DMN10H170SFG-7.
Higher current handling: A continuous drain current of 4.2A.
It uses the PowerDI3333-8 package, balancing thermal performance and size.
The domestic alternative VBQF1104N represents a significant 'performance-enhanced' choice:
It achieves substantial improvement in key parameters: the same 100V voltage rating, but a much higher continuous drain current of 21A.
Its on-resistance is drastically reduced to 36mΩ at 10V, promising lower conduction losses and higher efficiency.
Key Application Areas:
Original Model DMN10H099SFG-7: Ideal for 100V applications needing better efficiency than the DMN10H170SFG-7, such as medium-power DC-DC converters or motor drives where 4.2A current and 80mΩ RDS(on) are sufficient.
Alternative Model VBQF1104N: Suited for upgraded scenarios demanding much higher current capability (21A) and significantly lower conduction loss (36mΩ), such as high-current point-of-load converters, robust motor drives, or power stages where efficiency and thermal performance are critical.
In summary, this analysis reveals two selection paths for 100V applications:
For designs prioritizing a balance of standard performance and cost, the original DMN10H170SFG-7 (2.9A, 122mΩ) and its alternative VBQF1101M (4A, 130mΩ) offer solid solutions. VBQF1101M provides a pin-compatible option with a slight current advantage.
For designs where efficiency and current capacity are paramount, the original DMN10H099SFG-7 (4.2A, 80mΩ) provides a good performance step-up. However, the domestic alternative VBQF1104N (21A, 36mΩ) delivers a dramatic performance enhancement, making it an excellent choice for demanding applications requiring high power density and minimal losses.
The core conclusion is: Selection depends on precise requirement matching. Domestic alternatives like VBQF1101M and VBQF1104N provide not only backup options but also opportunities for performance upgrades or cost optimization, offering engineers greater flexibility in their design trade-offs.