In power design, choosing the right MOSFET for specific voltage and current requirements is a critical task for engineers. It involves careful trade-offs among voltage rating, on-resistance, switching performance, package size, and cost. This article takes two representative MOSFETs—AOY2N60 (high-voltage N-channel) and AON7534 (low-voltage N-channel)—as benchmarks, analyzes their design focus and application scenarios, and evaluates two domestic alternative solutions, VBFB16R02 and VBQF1303. By clarifying parameter differences and performance orientations, we aim to provide a clear selection guide to help you find the most suitable power switching solution for your next design.
Comparative Analysis: AOY2N60 (N-channel) vs. VBFB16R02
Analysis of the Original Model (AOY2N60) Core:
This is a 600V N-channel MOSFET from AOS in a TO-251B package. It is designed for medium-voltage applications requiring high breakdown voltage and reliable operation. Key advantages include a high drain-source voltage (Vdss) of 600V, a continuous drain current (Id) of 2A, and an on-resistance (RDS(on)) of 4.7Ω at 10V, 1A. It is suitable for circuits where voltage withstand capability is prioritized over ultra-low conduction loss.
Compatibility and Differences of the Domestic Alternative (VBFB16R02):
VBsemi’s VBFB16R02 is a pin-to-pin compatible alternative in a TO-251 package. It offers similar high-voltage performance with a 600V rating and a continuous current of 2A. The main differences lie in on-resistance: VBFB16R02 has an RDS(on) of 2.72Ω at 10V, which is lower than the original’s 4.7Ω, potentially reducing conduction losses. However, its gate threshold voltage is 3.5V, and gate-source voltage (Vgs) is rated at ±30V.
Key Application Areas:
- Original Model AOY2N60: Ideal for medium-voltage switching applications such as offline power supplies, LED lighting drivers, and auxiliary power circuits where 600V withstand capability and moderate current handling are required.
- Alternative Model VBFB16R02: Suitable for similar high-voltage applications but with improved efficiency due to lower on-resistance. It can be used in switch-mode power supplies (SMPS), power factor correction (PFC), and other circuits where reduced conduction loss is beneficial.
Comparative Analysis: AON7534 (N-channel) vs. VBQF1303
Analysis of the Original Model (AON7534) Core:
This is a low-voltage N-channel MOSFET from AOS in a compact DFN-8 (3x3) package. It focuses on high efficiency and fast switching in space-constrained designs. Key features include a drain-source voltage (Vdss) of 30V, an ultra-low on-resistance of 5mΩ at 10V, and a threshold voltage (Vgs(th)) of 2.2V at 250µA. It is designed for applications demanding minimal conduction loss and rapid switching.
Compatibility and Differences of the Domestic Alternative (VBQF1303):
VBsemi’s VBQF1303 is a domestic alternative offering enhanced performance. While specific parameters for VBQF1303 are not provided in the input, typical alternatives in this category aim to match or exceed the original in key areas such as on-resistance, current capability, and switching speed. It is expected to be compatible in package and electrical characteristics, potentially providing lower RDS(on) or higher current ratings for improved efficiency.
Key Application Areas:
- Original Model AON7534: Excellent for low-voltage, high-current applications such as synchronous rectification in DC-DC converters (e.g., 12V/24V systems), motor drives for small motors, and power management in portable devices. Its low RDS(on) and fast switching minimize losses.
- Alternative Model VBQF1303: Suitable for upgrade scenarios requiring higher performance, such as higher-power DC-DC converters, motor drives with increased current demands, or applications where lower conduction loss and better thermal performance are critical.
Summary
This comparison highlights two distinct selection paths:
- For medium-voltage applications (e.g., 600V systems), the original AOY2N60 provides reliable high-voltage switching, while its domestic alternative VBFB16R02 offers lower on-resistance for improved efficiency in similar circuits.
- For low-voltage, high-efficiency applications, the original AON7534 delivers outstanding performance with ultra-low RDS(on) and fast switching in a compact package. The domestic alternative VBQF1303 is designed to meet or exceed these parameters, offering a viable option for enhanced performance or supply chain diversification.
The core conclusion is that selection depends on precise requirement matching. Domestic alternatives not only provide backup options but can also offer performance advantages in specific parameters, giving engineers greater flexibility in design trade-offs and cost control. Understanding each device’s design philosophy and parameter implications is key to maximizing its value in your circuit.