In modern power design, balancing high-voltage withstand capability, high-current handling, and thermal performance is a critical challenge for engineers. Selecting the right MOSFET is not just about finding a pin-to-pin replacement—it requires a careful trade-off among voltage rating, current capacity, switching efficiency, and cost. This article takes two representative MOSFETs, AOW15S65 (high-voltage N-channel) and AONS66920 (high-current N-channel), as benchmarks. It deeply analyzes their design focus and application scenarios, while evaluating two domestic alternative solutions: VBN165R13S and VBGQA1107. By clarifying parameter differences and performance orientations, we provide a clear selection guide to help you find the most suitable power switching solution in the complex component landscape.
Comparative Analysis: AOW15S65 (High-Voltage N-channel) vs. VBN165R13S
Analysis of the Original Model (AOW15S65) Core:
This is a 650V N-channel MOSFET from AOS in a TO-262 package. Its design core is to provide robust high-voltage switching capability with reliable thermal performance. Key advantages include a high drain-source voltage (Vdss) of 650V, a continuous drain current (Id) of 15A, and an on-resistance (RDS(on)) of 290mΩ at 10V gate drive. This makes it suitable for off-line power applications requiring moderate current and high voltage endurance.
Compatibility and Differences of the Domestic Alternative (VBN165R13S):
VBsemi’s VBN165R13S is also offered in a TO-262 package and serves as a direct pin-to-pin alternative. The main differences lie in electrical parameters: VBN165R13S has the same 650V voltage rating but a slightly lower continuous current rating of 13A (vs. 15A) and a slightly higher on-resistance of 330mΩ at 10V. It utilizes a SJ_Multi-EPI process, which can offer good switching performance and reliability.
Key Application Areas:
- Original Model AOW15S65: Ideal for high-voltage, medium-current applications such as:
- Off-line SMPS (Switched-Mode Power Supplies) in industrial or consumer adapters.
- PFC (Power Factor Correction) stages.
- Motor drives and inverter circuits operating at high bus voltages.
- Alternative Model VBN165R13S: Suitable for similar high-voltage applications where the current requirement is within 13A and a cost-effective, reliable alternative is needed. Its SJ_Multi-EPI technology ensures good efficiency in switching applications.
Comparative Analysis: AONS66920 (High-Current N-channel) vs. VBGQA1107
This comparison shifts focus to high-current, low-on-resistance performance in a compact package.
Analysis of the Original Model (AONS66920) Core:
The AONS66920 from AOS is a 100V N-channel MOSFET in a DFN-8 (5x6) package. Its design pursues an optimal balance of high current capability, low conduction loss, and compact footprint. Key strengths include a very low on-resistance of 8.2mΩ at 10V gate drive, a high continuous drain current of 48A, and a 100V voltage rating. This combination is tailored for high-efficiency, high-power-density DC-DC conversion.
Compatibility and Differences of the Domestic Alternative (VBGQA1107):
VBsemi’s VBGQA1107 is a direct package-compatible alternative in DFN-8 (5x6). It represents a “performance-enhanced” option: while maintaining the same 100V voltage rating, it offers a significantly higher continuous current of 75A and an even lower on-resistance of 7.4mΩ at 10V. This is achieved using SGT (Shielded Gate Trench) technology, which reduces switching losses and improves thermal performance.
Key Application Areas:
- Original Model AONS66920: Excellent for high-current, efficiency-critical applications in compact spaces, such as:
- Synchronous rectification in high-current DC-DC converters (e.g., server VRMs, telecom power modules).
- Motor drives for robotics, e-mobility, or industrial tools.
- High-density power supplies where thermal management is key.
- Alternative Model VBGQA1107: Ideal for upgrade scenarios demanding higher current capacity and lower conduction losses. Its superior 75A rating and 7.4mΩ RDS(on) make it suitable for next-generation high-power DC-DC converters, advanced motor drives, and applications pushing the limits of power density and efficiency.
Summary and Selection Guide:
This analysis reveals two distinct selection paths:
For high-voltage (650V) applications, the original AOW15S65 offers a proven balance of 15A current and 290mΩ on-resistance in a thermally efficient TO-262 package, making it a reliable choice for off-line power and motor drives. Its domestic alternative VBN165R13S provides a compatible, cost-effective option with slightly derated current (13A) and higher on-resistance (330mΩ), suitable for designs where voltage endurance is critical but current demands are moderate.
For high-current (100V) applications in compact footprints, the original AONS66920 delivers an impressive 48A current with 8.2mΩ on-resistance in a small DFN package, perfect for high-density power conversion. The domestic alternative VBGQA1107 steps further with “performance-enhanced” specs—75A current and 7.4mΩ on-resistance—enabling higher power handling and lower losses for demanding upgrade scenarios.
Core Conclusion: Selection is not about absolute superiority but precise requirement matching. In the context of supply chain diversification, domestic alternatives like VBN165R13S and VBGQA1107 not only provide viable backups but also offer parameter enhancements in specific areas, giving engineers greater flexibility in design trade-offs and cost control. Understanding each device’s design philosophy and parameter implications is key to maximizing its value in your circuit.