In modern power design, balancing high-voltage handling, current capacity, and thermal performance in limited space is a critical challenge. Selecting the right MOSFET involves careful trade-offs among voltage rating, on-resistance, current capability, and package suitability. This article takes two representative MOSFETs—AOTF18N65 (high-voltage N-channel) and AON6162 (high-current N-channel)—as benchmarks, analyzing their design cores and application scenarios, while evaluating domestic alternatives VBMB165R20 and VBGQA1602. By clarifying parameter differences and performance orientations, we provide a clear selection guide to help you find the optimal power switching solution.
Comparative Analysis: AOTF18N65 (N-channel) vs. VBMB165R20
Analysis of the Original Model (AOTF18N65) Core:
This is a 650V N-channel MOSFET from AOS in a TO-220F package. Its design focuses on reliable high-voltage switching with robust thermal performance. Key advantages include a high voltage rating of 650V, continuous drain current of 18A, and an on-resistance of 390mΩ at 10V gate drive. The TO-220F package offers good heat dissipation, making it suitable for applications requiring high-voltage endurance and moderate current.
Compatibility and Differences of the Domestic Alternative (VBMB165R20):
VBsemi’s VBMB165R20 is a pin-to-pin compatible alternative in the same TO-220F package. It matches the 650V voltage rating but offers improved electrical parameters: a lower on-resistance of 320mΩ at 10V and a higher continuous current of 20A. This enhances efficiency and current-handling capability in high-voltage circuits.
Key Application Areas:
- Original Model AOTF18N65: Ideal for high-voltage, medium-power applications such as:
- Switch-mode power supplies (SMPS) and AC-DC converters.
- Motor drives and inverter circuits in industrial systems.
- Lighting ballasts and high-voltage power management.
- Alternative Model VBMB165R20: Suited for similar high-voltage applications where lower conduction loss and higher current capacity (up to 20A) are needed, offering an upgraded performance option.
Comparative Analysis: AON6162 (N-channel) vs. VBGQA1602
This comparison focuses on high-current, low-voltage applications where efficiency and power density are critical.
Analysis of the Original Model (AON6162) Core:
The AON6162 from AOS is a 60V N-channel MOSFET in a compact DFN-8 (5x6) package. It excels in high-current handling with a continuous drain current of 100A and an ultra-low on-resistance of 2.1mΩ at 10V gate drive. Its small footprint and high efficiency make it perfect for space-constrained, high-power designs.
Compatibility and Differences of the Domestic Alternative (VBGQA1602):
VBsemi’s VBGQA1602 is a direct alternative in the same DFN-8 package but with significantly enhanced performance. It features a similar 60V voltage rating but offers a much lower on-resistance of 1.7mΩ at 10V and a higher continuous current of 180A. This results in reduced conduction losses and superior current capability for demanding applications.
Key Application Areas:
- Original Model AON6162: Optimal for high-current, compact designs such as:
- Synchronous rectification in high-power DC-DC converters (e.g., server VRMs, telecom power).
- Motor drives for drones, e-bikes, or industrial tools.
- Battery management systems (BMS) and high-density power modules.
- Alternative Model VBGQA1602: Ideal for applications requiring extreme current handling (up to 180A) and minimal on-resistance, such as next-generation high-efficiency converters, advanced motor drives, or high-performance computing power supplies.
Conclusion:
This analysis highlights two distinct selection paths:
- For high-voltage applications (e.g., 650V systems), the original AOTF18N65 provides reliable performance with good thermal management. Its domestic alternative VBMB165R20 offers a compatible upgrade with lower on-resistance (320mΩ) and higher current (20A), improving efficiency without sacrificing voltage endurance.
- For high-current, low-voltage applications (e.g., 60V systems), the original AON6162 delivers excellent power density with 100A current and 2.1mΩ on-resistance. The domestic alternative VBGQA1602 pushes performance further with 180A current and 1.7mΩ on-resistance, enabling higher power density and lower losses in advanced designs.
The core insight is that selection depends on precise requirement matching. Domestic alternatives not only provide reliable backups but also offer performance enhancements in key parameters, giving engineers greater flexibility in design trade-offs, cost control, and supply chain resilience. Understanding each device’s design philosophy and parameter implications ensures optimal circuit performance.