As power demands for AI applications surge, this breakthrough DFN8 (5x6) package device redefines the boundaries of power density.

AI applications are developing at an unprecedented pace, from edge computing devices to intelligent robots. The demand for high-power, miniaturized power devices is becoming increasingly urgent. Against this backdrop, VBsemi recently launched a revolutionary new product, the VBGQA1202N , a 200V high-power SGT MOSFET that revolutionizes the packaging landscape for high-voltage power devices.

 Market pain point: the dilemma between high voltage and miniaturization

As AI application power demands climb to 200V levels, engineers face a difficult decision:

- Selecting traditional 100V devices - insufficient power, the system requires a complex boost solution

- Use 200V devices - forced to accept the bulky 220/263 package, which takes up valuable space

"200V SGT MOSFETs on the market are almost all limited to larger packages," said WeiBi Semiconductor Power Devices.

Product Director Wu Gong said, "This has caused many innovative AI designs to compromise on power density or pay extra costs for heat dissipation design."

VBGQA1202N: A disruptive solution

The birth of WeiBi Semiconductor's VBGQA1202N perfectly solves this industry problem:

Breakthrough specifications

 Revolutionary packaging breakthrough

The VBGQA1202N's biggest breakthrough is its ability to pack a high power capability of 200V/50A into a mere 5x6mm DFN8 package. The key to this achievement lies in MicroBi Semiconductor's innovative 3D packaging technology and advanced SGT (Shielded Gate Trench) process.

1. Space utilization increased by 300%: saving more than 60% of PCB area compared to traditional 220/263 packages

2. Optimized thermal performance: Unique heat dissipation channel design reduces junction-to-ambient thermal resistance by 40%

3. Friendly to automated production: Standard DFN package compatible with high-precision placement equipment

"Achieving 200V/50A performance in a 5x6mm package was considered impossible just six months ago," said Professor Wang, a renowned power design expert. "This breakthrough by MicroBi Semiconductor will change the fundamental rules of AI hardware design."

 Empowering the next generation of AI applications

the VBGQA1202N brings new possibilities to several high-growth AI fields:

Edge AI computing devices

 Intelligent Robot Power System

- Joint motor drive: High power density supports more compact joint design

- Power management system: 200V direct drive solution reduces conversion loss

- Sensing system power supply: Provides pure power for high-power sensors such as laser radar

High-performance AI accelerator card

"In the latest generation of AI accelerator card designs, the power module area often exceeds the compute unit itself," said the chief engineer of a leading AI hardware manufacturer. "After adopting the VBGQA1202N , our power supply footprint has been reduced by 58%, which allows us to add more compute cores."

Technical Depth: The pinnacle of SGT craftsmanship

The VBGQA1202N uses advanced SGT (Shielded Gate Trench) technology, which is the crystallization of Micro-Bi Semiconductor's R&D technology:

1. Shielded gate structure: effectively reduces gate charge (Qg) by 30% and switching losses by 45%

2. Ultra-low on-resistance: 18mΩ RDS(on) leads the industry in 200V class devices

3. Enhanced thermal performance: Heat flux per unit area increased by 2.8 times, solving the heat dissipation problem of small packages

4. EMI optimized design: Switching noise is reduced by 6dB, meeting the stringent environmental requirements of AI sensors

"The traditional view is that small package and high voltage are incompatible. VBsemi breaks this physical limitation through innovative charge balancing technology and a three-dimensional heat dissipation structure."

 Industry impact: Redefining the boundaries of power density

the VBGQA1202N is more than just a product launch; it also represents a revolution in power semiconductor design:

1. A revolution in design freedom: Hardware engineers gain the freedom to choose packages at the 200V level for the first time

2. System-level innovation: Enabling a new generation of ultra-compact AI device architecture

3. Cost structure optimization: Reduce heat dissipation and PCB area to reduce overall BOM cost

4. New energy efficiency standards: System efficiency increases by 3-5%, which is of great significance to data center-level AI applications

As a leader in power semiconductors in Taiwan, VBsemi is committed to solving fundamental challenges in electronic system design through innovative technologies. The launch of the VBGQA1202N further demonstrates the company's technological philosophy of "Density Innovation, Unlimited Power."