In the fierce competition of smart cleaning equipment in 2025, the performance boundary of flagship sweeping robots is being redefined by MOSFET technology. This article deeply disassembles the power electronics architecture of the latest generation of products and reveals three core findings:

The number of devices has increased dramatically : the number of MOSFETs used in a single machine has exceeded 40, and the coordinated design of drive, sensor, and power supply modules has become the key;

Parameter arms race : RDS(on) enters the sub-milliohm era, with VBSEMI/Infineon/TI and other manufacturers competing for the 0.9mΩ limit;

Failure mode upgrade : Thermal management has evolved from "passive heat dissipation" to "AI predictive temperature control", and GaN and SiC technologies have begun to penetrate consumer scenarios. Through this technology map, you will master the design code of the next generation of cleaning robot power electronics.

 The performance leap of high-end sweeping robots depends on the precise control of power electronic devices , among which MOSFET, as the core switching element, directly affects the motor efficiency, endurance and system stability. The following is a full module technology disassembly based on the 2025 flagship model:

1. Core application scenarios and selection logic of MOSFET

1. Multi-motor drive system

Application Modules :

Main wheel brushless motor (2 pcs, driving movement)

Side brush motor (2 pieces, side cleaning)

Double roller brush motor (2 pieces, rubber and bristle integrated design)

Lifting mop motor (1, pressure adjustment)

MOSFET Requirements :

Quantity : Each brushless motor requires 6 MOSFETs (three-phase full-bridge), and each brushed motor requires 4 (H-bridge), for a total of about 20-30 MOSFETs .

Key parameters :

Withstand voltage ≥ 30V (peak voltage of lithium battery power supply)

Continuous current 10-20A (instantaneous load of main wheel motor)

RDS(on) <5mΩ (reduce heat loss, such as VBGQA1400 )

 2. High-precision battery management system (BMS)

Functional requirements :

Support 100W fast charging (20V/5A input, such as VBGQF1402 )

Intelligent on/off of discharge circuit (to prevent over-discharge)

 MOSFET configuration :

Quantity : 4 (2 in each charging and discharging circuit connected back to back)

Selection points :

Reverse recovery time (trr) <50ns (reduce switching losses)

VGS(th) 1.8-2.5V (compatible with low voltage MCU control)

Package : DFN3X3 (such as VBQF1202 )

 MOSFET Role :

Load switch : controls the power on and off of the sensor group (such as VB1240 , SOT-23 package)

Quantity: 1-2 per sensor group, about 8-12 for the whole machine.

 2. High-end MOSFET technology benchmark in 2025

 3. Failure Analysis and Reliability Design

1. Thermal management challenges :

The motor drive MOSFET needs to be used with a copper substrate for heat dissipation (such as the "graphene heat spreader" of the Stone G20).

2. Life test standard :

After 100,000 consecutive switching cycles, the RDS(on) drift is <10%.

4. Future Technology Evolution Direction

1. Wide bandgap semiconductor replacement : Application of SiC MOSFET in fast charging modules (efficiency increased by 5%).

2. AI dynamic parameter adjustment : Real-time optimization of MOSFET switching frequency based on ground resistance (such as the "EcoPower 3.0" algorithm of Ecovacs X3).

Summary : By 2025, the use of MOSFET in high-end models will reach 40-50 pieces , and the selection will shift from "single performance" to system-level collaborative design , and the cost share will rise to 15%-20% of the BOM.