VBGED1401 is a single N-channel MOSFET in LFPAK56 package. It has a 40V withstand voltage, 150A ultra-high current carrying capacity and 0.8mΩ (@VGS=10V) on-resistance, which refreshes the performance limit of medium-voltage MOSFET.

Its innovative "wafer + copper clip" packaging technology combined with the SGT (Shielded Gate Trench) process provides a solution with both high power density and reliability for industrial motors, server power supplies and new energy vehicle electronic control systems, indicating that China's power semiconductors have become one of the world's top players in the "high frequency and low loss" field.

1. Performance breakthrough

1. Parameters crush competitors, breakthroughs in energy efficiency and space

Ultra-low conduction loss : 0.8mΩ@10V drive voltage (competitive products average 1.2-1.5mΩ), dynamic loss is reduced by 30%, directly benchmarking ONSEMI NTMYS1D3N04CTWG (1.15mΩ) and TI SQJ138EP-T1_GE3 (1.5mΩ).

High current and fast response : 150A continuous current capability, combined with the gate shielding design of the SGT process, the switching speed is 40% higher than that of traditional planar MOSFETs, suitable for high-frequency applications above 100kHz.

Space revolution : The LFPAK56 package area is 70% smaller than TO-220, and the PCB layout freedom is greatly improved, which is especially suitable for highly integrated power modules.

2. Original “copper clip + wafer” packaging technology

Thermal performance leap : The copper clip is directly bonded to the wafer, with a thermal resistance (RθJA) as low as 15℃/W, which is 50% more efficient than traditional packages in heat dissipation. The actual temperature rise is only 22℃ under full load operation in an 85℃ environment.

Surge resistance : The SOA (safe operating area) width is twice that of competing products, and can withstand 200A pulse current (10ms), perfectly coping with transient shocks such as motor startup and short-circuit protection.

3. Industrial-grade reliability design

Working temperature range: -55℃~175℃;

Passed the HTRB (high temperature reverse bias) test, the life expectancy is estimated to exceed 100,000 hours.

2. Application scenarios: From industry to automobiles, the energy efficiency revolution covers all aspects

1. Industrial Automation

Servo drive : Replace the traditional multi-chip parallel solution. A single VBGED1401 can support 30kW motor drive, reducing PCB area by 60%;

Data center power supply : 12V/48V bus conversion efficiency exceeds 97.5%, helping to meet EU CoC Tier 4 energy efficiency standards.

2. New Energy Vehicles

Electronic control system : 150A current supports 24V platform power management, and the switching loss is reduced, which increases the battery life by about 1.5%;

On-board charger (OBC) : 0.8mΩ on-resistance reduces heat loss by 40% and supports 22kW fast charging heat dissipation management.

3. Consumer Electronics

4. High-end board power supply : The high frequency and low loss characteristics perfectly match the instantaneous power consumption requirements of the GPU, and the ripple voltage is reduced to below 50mV.

Cost Advantage

The price is 20% lower than similar imported products, but the performance parameters are leading in all aspects.

Future Outlook: MicroBi Semiconductor's Technology Blueprint

It is planned to launch 60V/0.8mΩ products in 2026, further breaking through the energy efficiency ceiling of high-frequency power supplies.

User test verification:

VBGED1401 in charging management , and the overall efficiency is increased by 1.2%;

The industrial robot giant has measured that the motor response delay has been reduced from 1.2ms to 0.6ms, and has run without any failure for over 2,000 hours.