VBsemi officially released VBP2205N , the first -200V/50mΩ high-voltage MOSFET in mainland China . This P-channel power device in TO-247 package, with 55A continuous current carrying capacity and ultra-low on-resistance, fills the gap of domestic high-voltage MOSFET in industrial power supply, new energy and automotive electronics, marking that China's power semiconductors have officially entered the first echelon of "high voltage and low loss" technology.

 Technical strength: Why is VBP2205N an industry milestone?

1. Parameters of domestically made products surpass those of international giants for the first time

Voltage and current: -200V withstand voltage/-55A current, directly benchmarked against International Rectifier IR IRFP9240 (-200V/12A) and IXYS IXTH48P20P (-200V/48A), but RDS(on) is as low as 50mΩ (@VGS=10V), which is 15%-20% lower than the average of competing products.

Energy efficiency breakthrough: 55.2mΩ@10 V driving voltage, adapting to low voltage control scenarios and reducing the complexity of peripheral circuits.

2. Original “Dual-Trench Tech” technology

Technical highlights: Through the three-dimensional trench gate design, the carrier mobility is increased by 30% and the conduction loss is reduced;

Integrated Schottky diode with reverse recovery charge (Qrr) of only 35nC, 60% less than traditional planar MOSFET, eliminating voltage ringing in high-frequency applications.

Measured data: In the photovoltaic inverter test, the switching loss of VBP2205N is 22% lower than similar products, and the system efficiency is increased by 1.8%.

 3. Reliability in extreme environments

Industrial-grade robustness: The operating temperature range is -55℃~150℃, and it has passed the 1000-hour high temperature and high humidity (85℃/85%RH) test. The avalanche withstand (EAS) is 300mJ, which is suitable for sudden load scenarios such as motor drive.

 Application scenario: Redefining high voltage power supply design

1. New energy power generation system

Photovoltaic MPPT controller: 50mΩ on-resistance can reduce power loss by 3%, and increase the annual power generation of a single panel by about 5kWh.

Energy storage PCS: supports 20kHz high-frequency switching and is compatible with SiC hybrid topology.

2. Industrial Automation

 Servo drive : -200V withstand voltage directly replaces IGBT module, reducing cost by 40%;

PLC power module: static power consumption <0.1W, meeting EU ERP Tier 2 energy efficiency standards.

3. Electric vehicle supporting

 OBC (on-board charger): 55A current supports 11kW fast charging architecture;

High-voltage DCDC converter: Combined with SiC diodes, the efficiency exceeds 98%.

Mass production and supply chain: a key step towards localization

Capacity planning: VBsemi has achieved mass production with a yield rate exceeding 97.9%;

Price strategy: Lower than imported models, but leading in all aspects of performance parameters.

Industry evaluation: The release of VBP2205N means that Chinese companies finally have the "pricing power" in the field of high-voltage MOSFET.

 VBsemi's ambition: from a substitute to a rule maker

Technology roadmap: Launch 300V/20mΩ products in 2026, challenging the technical level of top foreign brands;

User test: Win-win performance and reputation

The first batch of engineering samples have been verified by customers:

A leading photovoltaic enterprise: Replaced imported models in 1500V string inverters, and the overall efficiency increased from 98.1% to 98.9%;

Industrial robot manufacturers: The motor start-stop response time is shortened to 0.5ms, and the overheating alarm rate is reduced to zero.

From reliance on imports to independent research and development, VBP2205N is not only a victory in the parameter table, but also a reflection of the technical confidence of the domestic supply chain. As Wang Yan said: "There is no 'almost' in power semiconductors - either conquer voltage or be eliminated by voltage."