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VBsemi releases third-generation SiC MOSFET: 21mΩ ultra-low impedance redefines
time:2025-03-26
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As a leading company focusing on high-performance MOSFET design, VBsemi has launched a number of MOSFET products based on third-generation SiC technology for key areas such as DC fast charging of electric vehicles, energy storage systems (ESS) and bidirectional charging (V2G). With ultra-low on-resistance, high switching efficiency and excellent heat dissipation performance, these devices can perfectly replace traditional silicon-based solutions and help customers build more compact and efficient power systems. 

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Core advantages of the product


1. Extreme efficiency


Using advanced SiC technology, the switching loss is reduced by more than 50%, and the system efficiency exceeds 96%.


Compared with the IGBT solution, it significantly reduces heat loss and simplifies the cooling design.


2. High power density


Small packages (such as T0247, T02474L) support high current output and save PCB space.


For example: VBP112MC100 has an on-resistance of only 21mΩ at 100A current, which is suitable for high-power intensive deployment.


3. Reliability guarantee


The full range of devices has passed rigorous dynamic parameter testing to ensure stability in harsh environments such as high temperature and high humidity.


Key model recommendation


Based on the attached parameter table, the following VBsemi MOSFET is optimized for fast charging and energy storage:

 

 

Model

Key Parameters

Typical Applications

VBP112MC100

100A/120V, Rds(on)=21mΩ (@18V)

DC fast charging main power switch

VBP112MC80

80A/120V, Rds(on)=40mΩ (@18V)

Energy storage inverter/bidirectional charging module

VBP112MC30

30A/120V, Compact T0247 package

Auxiliary power supply/distributed energy storage unit

VBL712MC30

30A/120V, 7-pin optimized heat dissipation design

High frequency switching circuits (such as LLC resonant topology)



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Design support and industry value


Quick selection: Provide reliable solutions and shorten the development cycle.


Grid-friendly: Support V2G technology to alleviate the impact of charging peak on the power grid.


Market trend: It is predicted that the global SiC power device market will exceed US$10 billion in 2030. VBsemi seizes the opportunity with cost-effective solutions.


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Choose VBsemi MOSFET to reconstruct the system energy efficiency boundary with single-tube performance!


(Note: All parameters are based on official data, and specific designs need to refer to the specification and application guide.)






VBsemi sincerely invites you to visit our booth N4.229 at the Munich Exhibition held at the Shanghai New International Expo Center from April 15 to 17, 2025. At that time, we will showcase the latest technology and product innovations and present you with cutting-edge semiconductor solutions in the industry. Whether you are a new customer or an old friend, we look forward to in-depth exchanges with you, jointly discussing future technological innovations, and jointly promoting the development of the semiconductor industry. Looking forward to seeing you at the exhibition!

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