Product introduction：
**VB1317 Product Introduction**
VB1317 is a high-performance N-channel MOSFET in a small SOT23-3 package, designed for efficient power management and switching applications. The device has a drain-source withstand voltage (VDSS) of 30V and a gate drive voltage range of ±20V, and can be turned on at a minimum gate voltage of 1.5V. Its on-resistance is extremely low, only 17mΩ (maximum), and it supports a continuous drain current of up to 10A, making it suitable for high-power density applications. VB1317 uses advanced Trench technology, which enables it to perform well in high-efficiency switching and low-loss power conversion, and is widely used in DC-DC converters, lithium battery protection, load switches, LED drivers and other applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
30V |
20V（±V） |
1.5V |
10A |
|
21(mΩ) |
17(mΩ) |
Trench |
**VB1317 detailed parameter description**
| **Parameter** | **Value** | **Unit** | **Remark** |
|-------------|----------|---------|----------|
| **Package type** | SOT23-3 | / | Small surface mount package|
| **Polarity** | N-channel| / | / |
| **Drain-source voltage (VDSS)** | 30 | V | Maximum withstand voltage|
| **Gate drive voltage (VGS)** | ±20 | V | Allowable gate voltage range|
| **Threshold voltage (VGS(th))** | 1.5 | V | Typical value|
| **On-resistance (RDS(on))** | 21 (typical) / 17 (maximum) | mΩ | VGS = 10V |
| **Maximum drain current (ID)** | 10 | A | Maximum continuous current|
| **Process type** | Trench | / | Provides lower on-resistance and better switching performance|
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Domain and module applications：
**Applications and Module Examples**
1. **DC-DC Power Converters**
The VB1317 is suitable for high-efficiency buck and boost DC-DC converters. Its low on-resistance (RDS(on)) enables it to reduce power loss and improve conversion efficiency in high-frequency switching power supplies. Common applications include notebook computers, embedded systems, and industrial power modules.
2. **Lithium Battery Management and Protection Circuits**
This MOSFET can be used in lithium-ion battery protection modules (BMS) to control the charge and discharge paths. Its current carrying capacity of up to 10A can support the protection circuits of high-current battery packs to prevent overcharging, over-discharging, or short circuits, thereby improving battery safety and life.
3. **Load Switch and Power Control**
In portable devices (such as smartphones, tablets, wireless speakers, etc.), the VB1317 can be used as a load switch to control the power supply of peripherals. Its low RDS(on) ensures minimal voltage loss and improves device endurance.
4. **LED lighting and drive circuits**
This MOSFET is suitable for high-power LED lighting drive circuits, such as automotive lighting, outdoor lighting, etc. Its low on-resistance and high current capability enable it to provide efficient current switching in PWM dimming applications, improve LED light efficacy and reduce heat generation.
5. **Motor drive and industrial control**
In small brushless motor (BLDC) or stepper motor drive circuits, VB1317 can be used as an H-bridge switch component to control the on and off and direction of the motor. Its high current capability makes it suitable for motor drive modules in drones, power tools, and smart home devices.
6. **Wireless Communication Equipment and RF Power Amplifier**
In RF (RF) and wireless communication equipment (such as Wi-Fi routers, wireless modules), this MOSFET can be used in power amplifiers or signal amplification circuits to improve the stability and transmission efficiency of RF signals.
In summary, VB1317 has the characteristics of high current capability, low conduction loss, and compact packaging, and is widely used in consumer electronics, power management, industrial control, wireless communications and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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