Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
DFN8(3X3)-C |
Half-Bridge-N+N |
30V |
20V(±V) |
1.7V |
35A |
|
16(mΩ) |
9(mΩ) |
Trench |
Detailed parameter description
| **Parameter** | **Value** |
|--------------------|----------------------------------|
| **Package type** | DFN8(3x3)-C |
| **Configuration** | Half-bridge|
| **Polarity** | N+N |
| **VDS** (maximum withstand voltage) | 30V |
| **VGS** (gate voltage) | ±20V |
| **Vthtyp** (threshold voltage) | 1.7V |
| **RDS(on)** (on resistance) | 16mΩ @ VGS = 4.5V (typical) |
| | 9mΩ @ VGS = 10V (typical) |
| **ID** (maximum current) | 35A |
| **Technology** | Trench technology|
Domain and module applications:
Application fields and module examples
1. **Power management module: **
VBQF3310G is widely used in various power management modules, especially low-voltage DC-DC converters, due to its low on-resistance and high current carrying capacity, which can improve efficiency and reduce power loss.
2. **Electric vehicle (EV) charging system: **
This MOSFET is suitable for half-bridge configuration in the battery charging system of electric vehicles, which can handle large power flows and ensure stable operation of the system.
3. **Computer power supply: **
In computer and server power supplies, this type of MOSFET is used as a power conversion switch component to support efficient power conversion and meet the strict requirements of computers for power stability and efficiency.
4. **Solar inverter: **
In solar inverters, VBQF3310G can provide efficient energy conversion, especially in the process of solar panel voltage conversion, to ensure stable power output.
5. **Industrial electric drive:**
For industrial automation and robotic systems, this MOSFET can be used to drive motors, providing the necessary current carrying capacity to ensure stability under high load conditions.
6. **Fast switching circuits:**
Among various switching power supplies and converters, the VBQF3310G is very suitable for applications that require high-speed switching due to its fast switching characteristics, reducing delays and improving response speed.
This half-bridge structure MOSFET product, with its high efficiency and low loss characteristics, has shown great application potential in many fields such as efficient power management and energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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