Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2) |
Single-P |
-20V |
20V（±V） |
-0.6V |
-10A |
40(mΩ) |
28(mΩ) |
20(mΩ) |
Trench |
Detailed parameter description
Model: VBQG2216
Package type: DFN6(2X2)
Configuration: Single
Polarity: P
Drain-source voltage (Vds): -20V
Gate-source voltage (Vgs): ±20V
Threshold voltage (Vthtyp): -0.6V
On-resistance (Rds(on)):
@Vgs=2.5V: 40 mΩ
@Vgs=4.5V: 28 mΩ
@Vgs=10V: 20 mΩ
Maximum leakage current (Id): -10A
Technology: Trench technology
Domain and module applications：
Application areas and module examples
Power management module: In power conversion systems, such as DC-DC converters, VBQG2216 can provide low on-resistance and fast switching characteristics to ensure efficient power conversion and reduce energy loss, especially for high-frequency switching modes.
Battery management system (BMS): In the battery management system, VBQG2216 can be used for power switching during battery charging and discharging to ensure efficient energy transmission, extend battery life, and ensure system stability.
Motor drive control: Used in DC motor or stepper motor drive circuits, VBQG2216 optimizes the motor drive process, reduces heat and improves motor efficiency through high current carrying capacity, stable on-resistance, and fast response switching characteristics.
Inverter application: In solar inverter or UPS systems, VBQG2216 provides low on-resistance and high current handling capabilities, effectively reducing system power loss and improving the energy efficiency of the entire system.
The low on-resistance and high current carrying capability of this MOSFET make it widely used in scenarios requiring high-efficiency power conversion and current control, such as automotive power management, power tools, and various industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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