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VBPB1106 Product details
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VBPB1106 Product Introduction
VBPB1106 is an N-channel power MOSFET in TO-3P package, designed based on Trench technology, with a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 150A. Its typical on-resistance (RDS(on) = 5.4mΩ @ VGS = 10V) ensures low power loss under high load conditions, suitable for high-efficiency power conversion and high-power applications. The MOSFET also has a gate-source voltage (VGS) limit of ±20V and a typical threshold voltage (Vthtyp) of 3.2V. These features make VBPB1106 an ideal choice for high-efficiency and high-reliability applications in power management, electric vehicles, industrial control and other fields.
VBPB1106 is an N-channel power MOSFET in TO-3P package, designed based on Trench technology, with a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 150A. Its typical on-resistance (RDS(on) = 5.4mΩ @ VGS = 10V) ensures low power loss under high load conditions, suitable for high-efficiency power conversion and high-power applications. The MOSFET also has a gate-source voltage (VGS) limit of ±20V and a typical threshold voltage (Vthtyp) of 3.2V. These features make VBPB1106 an ideal choice for high-efficiency and high-reliability applications in power management, electric vehicles, industrial control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 100V | 20V（±V） | 3.20V | 150A | 5.4(mΩ) | Trench |
VBPB1106 detailed parameter description
Package type: TO-3P
Configuration: Single tube configuration
Polarity: N channel (N type current)
Drain source voltage (VDS): 100V (maximum)
Gate source voltage (VGS): ±20V
Threshold voltage (Vthtyp): 3.20V (typical)
On resistance (RDS(on)): 5.4 mΩ @ VGS = 10V (typical)
Maximum drain current (ID): 150A
Technology type: Trench technology
Package type: TO-3P
Configuration: Single tube configuration
Polarity: N channel (N type current)
Drain source voltage (VDS): 100V (maximum)
Gate source voltage (VGS): ±20V
Threshold voltage (Vthtyp): 3.20V (typical)
On resistance (RDS(on)): 5.4 mΩ @ VGS = 10V (typical)
Maximum drain current (ID): 150A
Technology type: Trench technology
Domain and module applications：
Applicable fields and modules
As a high-performance power MOSFET, VBPB1106 is widely used in many high-power and high-efficiency fields. The following are some typical application fields and modules:
Power management system
VBPB1106 can be used in DC-DC converters, AC-DC power modules, etc. in power management modules. Its low on-resistance and high current carrying capacity improve the energy efficiency of the system, and it is especially suitable for power supply designs that require high power and high efficiency.
Electric vehicles (EV) and battery management
In the field of electric vehicles, VBPB1106 can be used as a key component of the battery management system (BMS) to help achieve fast charging and discharging control of the battery. Its high current carrying capacity enables it to efficiently manage battery packs while optimizing the battery charging process and energy transmission of the motor drive system.
Industrial automation and control systems
In industrial automation and control systems, VBPB1106 can be used as a switching element for high-power devices such as motor drive systems and robot controllers. Its fast switching performance and stability can help control complex loads, ensuring efficient energy conversion and precise current control.
Battery charge and discharge management system
This MOSFET can be widely used in high-power battery charge and discharge management systems. Its low on-resistance allows the system to convert energy more efficiently during charging and discharging, while avoiding excessive heat generation and protecting the battery from overload and overheating.
High-efficiency switching power supply (SMPS)
The fast switching characteristics and low loss characteristics of the VBPB1106 make it suitable for high-efficiency switching power supply (SMPS) applications such as communication equipment, power amplifiers, TVs and other consumer electronics. It can provide a stable voltage output and reduce the power consumption of the system.
Renewable energy systems (such as solar inverters)
In solar inverters and other renewable energy systems, the VBPB1106 can be used as the main power switching element. It can handle high-power currents from solar panels or wind power generation systems and help achieve efficient energy conversion to ensure stable system operation.
Through these applications, VBPB1106 helps improve the system's power density, reduce energy loss, and enhance the accuracy of power control. It is suitable for a variety of high-power, high-efficiency power systems and plays an important role in multiple industries.
As a high-performance power MOSFET, VBPB1106 is widely used in many high-power and high-efficiency fields. The following are some typical application fields and modules:
Power management system
VBPB1106 can be used in DC-DC converters, AC-DC power modules, etc. in power management modules. Its low on-resistance and high current carrying capacity improve the energy efficiency of the system, and it is especially suitable for power supply designs that require high power and high efficiency.
Electric vehicles (EV) and battery management
In the field of electric vehicles, VBPB1106 can be used as a key component of the battery management system (BMS) to help achieve fast charging and discharging control of the battery. Its high current carrying capacity enables it to efficiently manage battery packs while optimizing the battery charging process and energy transmission of the motor drive system.
Industrial automation and control systems
In industrial automation and control systems, VBPB1106 can be used as a switching element for high-power devices such as motor drive systems and robot controllers. Its fast switching performance and stability can help control complex loads, ensuring efficient energy conversion and precise current control.
Battery charge and discharge management system
This MOSFET can be widely used in high-power battery charge and discharge management systems. Its low on-resistance allows the system to convert energy more efficiently during charging and discharging, while avoiding excessive heat generation and protecting the battery from overload and overheating.
High-efficiency switching power supply (SMPS)
The fast switching characteristics and low loss characteristics of the VBPB1106 make it suitable for high-efficiency switching power supply (SMPS) applications such as communication equipment, power amplifiers, TVs and other consumer electronics. It can provide a stable voltage output and reduce the power consumption of the system.
Renewable energy systems (such as solar inverters)
In solar inverters and other renewable energy systems, the VBPB1106 can be used as the main power switching element. It can handle high-power currents from solar panels or wind power generation systems and help achieve efficient energy conversion to ensure stable system operation.
Through these applications, VBPB1106 helps improve the system's power density, reduce energy loss, and enhance the accuracy of power control. It is suitable for a variety of high-power, high-efficiency power systems and plays an important role in multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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