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ZXMN10A08DN8TC-VB Product details

Product introduction:

1. **Product Introduction: ZXMN10A08DN8TC-VB**

ZXMN10A08DN8TC-VB is a bipolar N+N type MOSFET in SOP8 package, with a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V (±). Its maximum drain current (ID) is 3A, suitable for a variety of power switching and control applications. The gate-source threshold voltage (Vth) of this MOSFET is 1.5V, which can provide efficient switching operation under low voltage conditions. The on-resistance (RDS(ON)) is 200mΩ@VGS=10V, which can effectively reduce switching losses and ensure efficient operation of the system. Its Trench technology ensures excellent switching performance and low losses, which is very suitable for power management, motor drive, battery management system and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 100V 1.5V 3A 200mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 100V 1.5V 3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 100V 1.5V 3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
2. **Detailed parameter description: ZXMN10A08DN8TC-VB**

- **Model**: ZXMN10A08DN8TC-VB
- **Package**: SOP8
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 1.5V
- **On-resistance (RDS(ON))**:
- N-channel (VGS=10V): 200mΩ
- **Maximum drain current (ID)**: 3A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: 150W (based on actual working conditions)
- **Switching speed**: High-speed switching, suitable for fast response applications
- **Input capacitance (Cgs)**: 280pF (VGS=10V)
- **Output capacitance (Cds)**: 35pF (VDS=50V)

Domain and module applications:

3. **Application fields and module examples**

The dual N-type MOSFET design and low on-resistance of ZXMN10A08DN8TC-VB make it excel in various power management, motor drive, load switching and power conversion fields. Here are some typical fields and module examples of this type of MOSFET in specific applications:

# **Power management and conversion**

- **DC-DC converter**: ZXMN10A08DN8TC-VB can be used as a power switching device in DC-DC converters, especially for buck and boost conversion applications that require efficient current switching. Its low RDS(ON) and high-speed switching characteristics make it very suitable for high-efficiency power supply design, reducing conversion losses and improving system efficiency.

- **Battery Management System (BMS)**: In the battery management system, ZXMN10A08DN8TC-VB can be used for battery charging and discharging control. The dual N-type configuration can provide efficient current reverse control, ensure the safety and efficiency of battery charging and discharging, and extend the battery life.

Summary

ZXMN10A08DN8TC-VB is an efficient dual N-type MOSFET suitable for power management, motor drive, load switching and power control. Its low on-resistance, high current carrying capacity and efficient switching performance make it an ideal choice for applications such as DC-DC converters, battery management systems, smart homes, electric vehicles and power inverters. The device provides efficient power conversion and current control, and can perform well in a variety of industrial and consumer electronics products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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