Product introduction：
1. **Product Introduction: ZXMC3A18DN8TC-VB**
ZXMC3A18DN8TC-VB is a bipolar N+P type MOSFET in SOP8 package, with drain-source voltage (VDS) of ±30V and gate-source voltage (VGS) of 20V (±). The device has efficient conduction characteristics, and its on-resistance (RDS(ON)) is 24mΩ (N-channel) and 50mΩ (P-channel) at VGS = 4.5V, and 18mΩ (N-channel) and 40mΩ (P-channel) at VGS = 10V, respectively, which can provide excellent power efficiency and low conduction loss. The drain current (ID) of ZXMC3A18DN8TC-VB is ±8A, which is suitable for bipolar power circuits, bidirectional switches and motor drive systems. The design using Trench technology makes the device have good switching performance and low loss, which is suitable for high-efficiency power management and power conversion applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
2. **Detailed parameter description: ZXMC3A18DN8TC-VB**
- **Model**: ZXMC3A18DN8TC-VB
- **Package**: SOP8
- **Configuration**: Dual-N+P-Channel
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**:
- N-channel: 1.6V
- P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-channel (VGS=4.5V): 24mΩ
- P-channel (VGS=4.5V): 50mΩ
- N-channel (VGS=10V): 18mΩ
- P-channel (VGS=10V): 40mΩ
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: 80W (based on actual operating conditions)
- **Switching speed**: High-speed switching, suitable for fast response applications
Domain and module applications：
3. **Application fields and module examples**
The low on-resistance and high current carrying capacity of the ZXMC3A18DN8TC-VB enable it to perform well in a variety of power management, motor drive and power control applications. The following are some typical fields and module examples of this MOSFET in practical applications:
# **Power management and power conversion**
- **DC-DC converter**: This MOSFET can be used in buck and boost converters, especially for occasions requiring bidirectional switching operation. Its combination of N+P channels provides efficient power conversion capabilities for power supply design, ensuring the efficiency and reliability of the power module.
- **Battery Management System (BMS)**: The ZXMC3A18DN8TC-VB can be used for bidirectional current control in the battery management system to ensure the safety of the battery during charging and discharging. Due to its bipolar configuration, it is able to provide excellent performance in current control in different directions, suitable for efficient battery protection and management.
Conclusion
ZXMC3A18DN8TC-VB is a powerful dual N+P MOSFET suitable for a variety of power management, motor drive and high-efficiency power control applications. Its low on-resistance, bipolar configuration and high current carrying capacity make it particularly suitable for high-efficiency power conversion, load switching, motor control and other fields. Whether in consumer electronics, industrial automation, electric vehicles or battery management systems, ZXMC3A18DN8TC-VB can provide excellent performance and stability to meet the needs of complex applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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