Product introduction：
Product Introduction
**ZXMC3A17DN8TC-VB** is a high-efficiency dual MOSFET device in a **SOP8** package and configured as **Dual-N+P-Channel**. The MOSFET provides a maximum drain-source voltage of **±30V** and can withstand a maximum drain current of **±8A**. Its **N-Channel** and **P-Channel** design enables bidirectional control in the same package, which is very suitable for applications such as power management, load switching, and motor drive. The device uses **Trench** technology, which has low on-resistance and excellent switching performance, helping to improve the system's energy efficiency and reduce heat loss.
ZXMC3A17DN8TC-VB's **N-Channel** and **P-Channel** MOSFETs are suitable for applications that require bipolar switching, especially in high-efficiency power supply design, bidirectional current control, and power management systems. At **V_GS = 4.5V** or **10V**, it provides an on-resistance as low as **24mΩ** and **18mΩ**, and a P-Channel on-resistance of **50mΩ** and **40mΩ**, respectively. Such electrical characteristics make it very suitable for low-power, high-efficiency power conversion and motor control.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual N-Channel + P-Channel (Dual-N+P-Channel)
- **Maximum drain-source voltage (V_DS)**: ±30V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**:
- **N-Channel**: 1.6V
- **P-Channel**: -1.7V
- **On-resistance (R_DS(ON))**:
- **N-Channel**:
- 24mΩ @ V_GS = 4.5V
- 18mΩ @ V_GS = 10V
- **P-Channel**:
- 50mΩ @ V_GS = 4.5V
- 40mΩ @ V_GS = 10V
- **Maximum Drain Current (I_D)**: ±8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C (refer to datasheet for specific values)
Domain and module applications：
Applicable fields and modules
**ZXMC3A17DN8TC-VB** Due to its low on-resistance, high switching speed and bipolar switching characteristics, it is very suitable for scenarios that require bidirectional current control and high-efficiency conversion. The following are typical application fields and modules of this MOSFET:
1. **Power Management System (SMPS)**
In power management systems, ZXMC3A17DN8TC-VB can be used for bidirectional current control and high-efficiency power conversion, such as DC-DC converters, AC-DC power adapters, etc. The low on-resistance of this device helps improve system efficiency, reduce power consumption and heat, and is suitable for power modules that require small size and high efficiency.
2. **Battery Management System (BMS)**
In battery management systems, ZXMC3A17DN8TC-VB is suitable for battery charging and discharging control. Its **N-Channel** and **P-Channel** design can realize bidirectional charge/discharge control of the battery, ensure that the battery pack works in a balanced manner during the charge and discharge process, and avoid damage caused by overcurrent or overvoltage.
3. **Motor drive system**
In motor control, ZXMC3A17DN8TC-VB is suitable for applications such as brushless DC motor (BLDC) drive and stepper motor drive. Due to the bipolar characteristics of this MOSFET, it can provide forward and reverse current control in motor drive, allowing the motor to accurately adjust speed and direction.
4. **Load switch and power distribution**
In high-efficiency load switching and power distribution systems, this device can be used for high-side and low-side switch control, and is suitable for modules such as power switches, load protection, and switching power supplies. Its low on-resistance makes the energy loss during the switching process extremely small, which helps to improve the efficiency of the overall system.
5. **Communication and Data Center Power Module**
ZXMC3A17DN8TC-VB is also suitable for power modules in communications and data centers. It can stably control current, reduce energy loss, and provide precise power distribution for electronic devices. It is particularly suitable for efficient power management and high-load current control.
6. **Automotive Electronics System**
In the field of automotive electronics, ZXMC3A17DN8TC-VB can be used for battery management, on-board power converters and electric vehicle drive systems. Its efficient bipolar switching performance and durability make it an ideal choice for on-board power management and drive control systems.
7. **LED Drive Circuit**
This MOSFET is also suitable for LED drive circuits, especially in scenarios where current regulation and stable voltage output are required. It can effectively control current, protect LED lamps from current fluctuations, and extend service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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