Product introduction：
1. Product Introduction (XTP110N055P-VB)
The XTP110N055P-VB is a unipolar N-channel MOSFET in a TO220 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 60V, its gate-source voltage (VGS) can withstand ±20V, and it has a very low on-resistance (RDS(ON)) of 5mΩ (VGS=10V), making it an excellent performer in high-efficiency power supply and current load control applications. With a maximum drain current (ID) of 120A, this MOSFET provides excellent current carrying capacity and low power consumption. Using advanced Trench technology, the XTP110N055P-VB has fast switching response and low conduction loss, making it suitable for high-power power supply and load control fields that require high efficiency, low loss, and fast response.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
| **Parameter** | **Description** |
|-------------------------|--------------------------------------------------------------------------|
| **Model** | XTP110N055P-VB |
| **Package** | TO220 |
| **Configuration** | Unipolar N-channel|
| **Maximum drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 5mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | 120A |
| **Technology type** | Trench technology|
- **VDS**: Maximum drain-source voltage is 60V, suitable for a variety of low to medium voltage applications, and can meet the operating requirements of most power supplies and switching circuits.
- **VGS**: Gate-source voltage is ±20V, suitable for standard drive voltage, ensuring stable operation of MOSFET within the normal operating range.
- **Vth**: Threshold voltage is 3V, providing reliable switching operation, suitable for starting at a lower gate voltage.
- **RDS(ON)**: On-resistance is 5mΩ (VGS = 10V), with ultra-low conduction loss, ensuring efficient current transfer, reducing heat and power loss.
- **ID**: Maximum drain current is 120A, with very high current carrying capacity, suitable for high power applications.
Domain and module applications：
3. Applicable fields and modules
XTP110N055P-VB is widely used in the following fields and modules due to its excellent current carrying capacity, low on-resistance and high-efficiency switching performance:
- **Power management system**: XTP110N055P-VB is particularly suitable for high-power power management systems such as DC-DC converters, AC-DC power adapters, and vehicle power systems. Its ultra-low on-resistance and high current carrying capacity enable it to perform well in high-efficiency power conversion and voltage regulation modules.
- **Electric vehicle (EV) battery management system (BMS)**: This MOSFET can be used in the battery management system of electric vehicles to perform efficient battery charging, discharging and protection functions. Its low on-resistance helps improve the energy efficiency of the battery management system, reduce heat loss and extend system life.
- **High-power switching power supply**: In high-power switching power supplies (such as server power supplies, power electronic equipment, power converters, etc.), the high current capability and low conduction loss of the XTP110N055P-VB are very suitable, which can optimize power conversion efficiency and reduce energy loss.
- **Motor drive and control**: This MOSFET is suitable for motor drive and control systems, especially for AC brushless motor (BLDC) controllers and inverter applications. Through its high-speed switching characteristics, it can effectively improve the efficiency of motor drive systems.
- **Automotive electronics**: In automotive electronic systems, the XTP110N055P-VB can be used in vehicle power supplies, power control modules and battery management systems, providing excellent current control and stable power regulation to ensure the reliability of automotive electronic systems under high loads and extreme environments.
- **Industrial power systems**: This MOSFET is also widely used in industrial automation, power transmission and control systems. It provides stable power management in high-power industrial equipment, especially where high current and low power consumption are required.
- **Renewable Energy Systems**: The XTP110N055P-VB can be used in solar inverter and wind power generation control systems to ensure efficient control of current flow, reduce energy losses, and help improve overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
