Product introduction：
1. Product Introduction (XP131A1235SR-VB)
XP131A1235SR-VB is a unipolar N-channel MOSFET in SOP8 package, designed for low voltage and high current applications, and widely used in power management, load switching and various low voltage and high efficiency power conversion applications. Its maximum drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of this MOSFET is only 8mΩ at VGS = 10V and 11mΩ at VGS = 4.5V, with ultra-low on-resistance and excellent current conduction capability. Its maximum drain current (ID) is 13A, which can meet the needs of high current loads. It is manufactured using Trench technology and has efficient current control capability, suitable for various medium and low voltage power supplies and load control applications. The XP131A1235SR-VB provides a stable and efficient power management solution, especially suitable for high-performance, low-power battery-driven devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
| **Parameter** | **Description** |
|-------------------------|--------------------------------------------------------------|
| **Model** | XP131A1235SR-VB |
| **Package** | SOP8 |
| **Configuration** | Unipolar N-channel|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 11mΩ (VGS=4.5V), 8mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 13A |
| **Technology type** | Trench technology|
- **VDS**: The maximum drain-source voltage is 30V, which is suitable for medium and low voltage switching power supplies and load control.
- **VGS**: The gate-source voltage is ±20V, which adapts to the common gate drive voltage range and ensures stable operation in a variety of applications.
- **Vth**: The threshold voltage is 1.7V, which ensures that it can start working at a lower gate voltage and provides fast response switching characteristics.
- **RDS(ON)**: The on-resistance is 8mΩ at VGS = 10V and 11mΩ at VGS = 4.5V. It has extremely low conduction loss and is suitable for high-efficiency power supply systems.
- **ID**: The maximum drain current is 13A, which is suitable for the control of higher current loads and provides excellent switching performance.
Domain and module applications：
3. Application fields and modules
XP131A1235SR-VB is suitable for the following fields and modules:
- **Power management system**: This MOSFET performs well in switching power supplies, DC-DC converters, positive and negative power modules. Its low on-resistance and high current carrying capacity make it an ideal choice for high-efficiency power management modules, providing the lowest energy loss during power conversion.
- **Portable devices and mobile applications**: The XP131A1235SR-VB has excellent switching characteristics and is particularly suitable for portable devices and mobile applications such as smartphones, tablets, portable battery chargers, etc. Its low power consumption and high efficiency can extend the battery life.
- **Battery management system (BMS)**: This MOSFET can be used for switch control applications in battery management systems, such as battery charge and discharge control, overcurrent protection, short circuit protection, etc. Due to its low on-resistance, it can reduce heat generation and optimize battery efficiency.
- **Automotive electronics**: XP131A1235SR-VB is suitable for automotive power management systems, such as automotive LED light control, electronic parking brake system, on-board charger, etc. Its high reliability and high efficiency can meet the high requirements of automotive electronic systems for power management and energy conversion.
- **Smart home devices**: In smart home devices, XP131A1235SR-VB can be used in modules such as smart sockets, LED lighting control, and automatic power switches to achieve efficient power management and switch control.
- **Industrial control systems**: XP131A1235SR-VB can also be used in load switches, relay replacement modules, and power conversion modules in industrial control systems. Its low on-resistance and high current capability can effectively improve the efficiency and response speed of the control system.
- **Consumer Electronics**: In consumer electronics, XP131A1235SR-VB can be used in low-power devices and high-efficiency power modules, such as smart watches, wearable devices, audio systems, etc., to provide stable power conversion and management.
In summary, XP131A1235SR-VB is an N-channel MOSFET with low on-resistance and high current carrying capacity, suitable for a variety of low- and medium-voltage power management and load control applications, especially in portable devices, battery management, automotive electronics, smart homes and other fields, can provide efficient and stable power conversion and management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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