Product introduction:
Product Introduction
**WSP4616-VB** is a dual N/P channel MOSFET based on Trench technology. It adopts SOP8 package and has good current control and high efficiency performance. It is suitable for medium voltage and medium current power management and switching applications. This MOSFET has a maximum drain-source voltage (VDS) of ±30V, and provides very low on-resistance (RDS(ON)) at VGS = ±10V. The RDS(ON) of the N channel is 18mΩ and the RDS(ON) of the P channel is 40mΩ, which can effectively reduce power consumption. Its maximum drain current (ID) is ±8A, which is suitable for various power management, drive circuits and high-efficiency switching applications. Due to its dual N/P channel configuration, this MOSFET is suitable for various applications requiring bidirectional current control, such as H-bridge circuits, bidirectional load switches, power management systems, etc.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual-N/P-Channel
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**:
- N-channel: 1.6V
- P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-channel: 24mΩ @ VGS = 4.5V, 18mΩ @ VGS = 10V
- P-channel: 50mΩ @ VGS = 4.5V, 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**:
- N-channel: 8A
- P Channel: -8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Application areas**: power management, battery protection, H-bridge circuit, load switch, power amplifier, automotive electronics, LED driver, etc.
Domain and module applications:
Application fields and module examples
1. **H-bridge circuit**:
Due to its dual N/P-channel MOSFET configuration, WSP4616-VB is very suitable for H-bridge circuits, especially in applications that require bidirectional current control. H-bridge circuits are widely used in scenarios such as motor drives, electric vehicles, smart home appliances, and automated control systems. By combining N-channel and P-channel MOSFETs, efficient current control and reverse current switching can be achieved, improving the efficiency and reliability of the system.
2. **Battery protection system**:
WSP4616-VB is also widely used in battery management systems (BMS). Due to its N/P-channel MOSFET configuration, it can achieve bidirectional current control, provide efficient switch control during charging and discharging, and protect the battery from overcurrent and overvoltage. Especially in the fields of power tools, electric vehicles, portable devices, etc., WSP4616-VB can effectively improve the performance and safety of battery management systems.
3. **Load switch application**:
WSP4616-VB is suitable for load switch circuits, which can achieve efficient and low-power power management while controlling current. It is suitable for switching small loads such as solenoid valves, power windows, and electric seat adjusters. The combination of N/P channel MOSFET enables the device to work stably in different current directions and is widely used in load switches for automotive electronics, home appliances, and smart devices.
4. **Power management system**:
In power management systems, WSP4616-VB has low on-resistance and high current carrying capacity, and can be used as a switching element to efficiently control the output of the power supply. It is particularly suitable for power modules such as DC-DC converters, AC-DC converters, and switching power supplies (SMPS), providing efficient current control, reducing energy loss, and improving overall efficiency. The low on-resistance characteristics of this MOSFET can also significantly reduce heat loss, making it suitable for high-efficiency power management systems.
5. **Automotive electronics**:
In automotive electronic systems, WSP4616-VB can be used to control low-power loads such as battery management, power windows, and power seat adjustments. Its dual N/P channel design can provide efficient bidirectional current control in situations such as battery power management and load switching, and is particularly suitable for on-board power modules, intelligent battery management, and on-board electric devices.
6. **LED drive circuit**:
WSP4616-VB is also very suitable for use in LED drive circuits. Due to its low on-resistance and high current carrying capacity, it can stably drive LEDs and provide efficient energy conversion during switching. It is particularly suitable for driving high-power LED lighting and display backlight sources, and can ensure stable drive current while reducing heat loss and improving system reliability and efficiency.
7. **Power amplifier**:
WSP4616-VB can also be used as a switching element in a power amplifier, especially for applications that require stable and efficient current switching control. In power amplifiers such as audio amplifiers and RF amplifiers, the high efficiency and low on-resistance characteristics of WSP4616-VB can provide better signal processing and power conversion, and are widely used in high-frequency circuits and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features