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WSD3028DN-VB Product details

Product introduction:

Product Introduction: WSD3028DN-VB MOSFET

WSD3028DN-VB is a high-performance single-tube N-channel MOSFET that uses Trench technology and is packaged in DFN8 (3x3) form. The device has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, and is suitable for various application scenarios that require efficient switching control. The threshold voltage (Vth) of this MOSFET is 1.7V and it has a low on-resistance (RDS(ON)), which enables it to exhibit excellent performance under low-voltage drive. Its maximum continuous leakage current (ID) is 30A, and it can be widely used in power management, DC-DC converters, load switches and other applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 30A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description:

| Parameter | Description |
|------|------|
| **Model** | WSD3028DN-VB |
| **Package** | DFN8 (3x3) |
| **Configuration** | Single N-channel|
| **VDS** | 30V |
| **VGS** | ±20V |
| **Vth (threshold voltage)** | 1.7V |
| **RDS(ON)** | 19mΩ (VGS=4.5V)
13mΩ (VGS=10V) |
| **ID (maximum leakage current)** | 30A |
| **Technology** | Trench technology|

Domain and module applications:

Application fields and module examples:

1. **Power management and DC-DC converters**:
WSD3028DN-VB is particularly suitable for DC-DC converters due to its low on-resistance (RDS(ON)) and high leakage current carrying capacity (30A), especially in situations where efficient power conversion is required. For example, in automotive power management systems, it is used as a power switch to reduce power consumption and improve energy efficiency.

2. **Load switch applications**:
The low RDS(ON) characteristics of this MOSFET make it an ideal choice for load switch applications. When used in battery-driven devices, it can effectively reduce switching losses and extend battery life. For example, in portable devices, it can be used as a switching element in the battery management system to provide precise current control.

3. **Smart home devices**:
In the field of smart homes, WSD3028DN-VB can be used in power switches, lighting controls, and small appliances. Through its efficient switching characteristics, it ensures stable operation of the device under long-term use and reduces power consumption.

4. **High-efficiency LED driver**:
Due to its low on-resistance, the WSD3028DN-VB can be used as a switching device in the LED drive circuit to provide efficient and stable drive current and minimize energy loss. Especially in applications where multiple high-power LED lamps need to be driven, the WSD3028DN-VB can ensure the efficiency and reliability of the system.

5. **Portable charging devices**:
In the charging module of mobile devices, the WSD3028DN-VB can be used to achieve efficient current regulation. Its low RDS(ON) helps reduce heat generation, thereby improving the overall charging efficiency, and is particularly suitable for high-current charging applications such as fast charging technology.

With its low on-resistance, high current capability and low threshold voltage, the WSD3028DN-VB has become an ideal choice for power management, battery management and efficient power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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