Product introduction：
1. **Product Introduction:**
WNM2300-3 TR-VB is a high-performance single N-Channel MOSFET in a small SOT23-3 package with low on-resistance (RDS(ON)) and efficient switching characteristics. Its maximum drain-source voltage (VDS) is 20V and the maximum gate-source voltage (VGS) is ±12V, which is suitable for low-voltage, high-frequency applications. With a maximum drain current of 6A, the WNM2300-3 TR-VB MOSFET is widely used in electronic products that require high efficiency and low power consumption, especially in battery-powered systems, switching power supplies, signal processing, and power management. It uses advanced Trench technology to improve conductivity and reduce on-resistance while ensuring higher reliability and efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
2. **Detailed parameter description:**
- **Package type:** SOT23-3
- **Configuration:** Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS):** 20V
- **Maximum gate-source voltage (VGS):** ±12V
- **Threshold voltage (Vth):** 0.5V ~ 1.5V
- **On-resistance (RDS(ON)):**
- 42mΩ @ VGS = 2.5V
- 28mΩ @ VGS = 4.5V
- **Maximum drain current (ID):** 6A
- **Technology:** Trench
- **Power loss (P_D):** Lower on-resistance can reduce power loss depending on application conditions
- **Operating temperature range (T_j):** -55°C to 150°C
- **Gate charge (Qg): ** Moderate, suitable for high-efficiency switching applications
- **Maximum power (P_max): ** Provides corresponding power stability according to the working environment
- **Package size: ** Small SOT23-3, suitable for space-constrained applications
Domain and module applications：
3. **Applications and Module Examples:**
# 1. **Low Voltage Power Management:**
The WNM2300-3 TR-VB MOSFET is widely used in low voltage power management systems. With a maximum drain-source voltage of 20V, it can support many power conversion applications such as buck and boost converters, and is particularly suitable for USB power adapters, chargers, and low voltage power modules. Due to its low on-resistance (28mΩ @ VGS = 4.5V), it can reduce power losses and improve overall efficiency, especially suitable for use in compact power designs.
# 6. **Automotive Electronics:**
In automotive electronics applications, the WNM2300-3 TR-VB can be used in low voltage battery management, vehicle power, and control circuits. With its ability to handle 6A of drain current, it can achieve efficient power conversion and current control in the low voltage circuits of the car to meet the needs of automotive electrical systems.
Summary:
WNM2300-3 TR-VB is a small and efficient single N-Channel MOSFET in SOT23-3 package, suitable for low voltage and high efficiency switching applications. Its low on-resistance and high drain current capability make it widely used in battery-driven equipment, power management, switching power supplies, signal conditioning and low power electronic applications. With its advanced Trench technology, this MOSFET provides excellent switching performance and efficient energy conversion, suitable for precision power control and current management needs in a variety of fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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