Product introduction：
Product Introduction
**WNM2020-3 TR-VB** is a **Single-N-Channel MOSFET** in a **SOT23-3** package, designed for low-voltage, high-efficiency applications. This MOSFET has a **20V** maximum drain-source voltage (VDS), suitable for **low-power switching** and **signal processing** occasions. Its **on-resistance (RDS(ON))** is low, providing excellent current conduction efficiency, which is 42mΩ** at **VGS=2.5V** and 28mΩ** at **VGS=4.5V**, which is very suitable for switching and regulation applications with medium current loads. The maximum drain current is **6A**, and it uses **Trench technology**, with low switching losses and fast response characteristics, and is widely used in portable electronic devices and battery-driven systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
Detailed parameter description
- **Model**: WNM2020-3 TR-VB
- **Package type**: SOT23-3
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS = 2.5V
- 28mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Maximum power dissipation**: 0.5W
- **Operating temperature range**: -55°C Up to 150°C
- **Reverse recovery characteristics**: Built-in reverse diode, suitable for reverse current protection circuit
Domain and module applications：
Applicable fields and modules
**1. Power management of portable devices**
**WNM2020-3 TR-VB** is suitable for various **portable electronic devices**, such as smartphones, tablets, wearable devices, etc. The low on-resistance and low threshold voltage of this MOSFET enable it to work effectively in a low-power battery-powered environment, optimize the power consumption of the device, and extend battery life. Its **6A** maximum drain current can meet the requirements of these devices for medium-power loads.
**2. Battery drive system and battery management system (BMS)**
In the **battery management system (BMS)**, **WNM2020-3 TR-VB** can be used in **battery chargers**, **battery protection circuits** and **battery monitoring** to ensure high efficiency and safety of the system. This MOSFET can respond quickly to switch control, optimize the battery charging process, ensure that the battery is in a safe state during charging and discharging, and has low conduction loss.
**3. Power Switching and Regulation Applications**
This **MOSFET** is also suitable for **low voltage power switching**, such as **DC-DC converters** and **LDO (Low Dropout Regulator)**. These applications require **MOSFET** to work efficiently in a lower voltage range, and **WNM2020-3 TR-VB**'s low on-resistance reduces energy loss during voltage conversion and improves conversion efficiency. In low voltage power regulation and voltage regulation applications, **WNM2020-3 TR-VB**'s low on-resistance helps reduce heat loss and improves the stability of the entire power system.
**4. Switching Control in Communication Equipment**
In **communication equipment**, especially **RF (RF) switches** and **modems**, **WNM2020-3 TR-VB**'s low on-resistance and fast response characteristics make it an ideal choice. MOSFET can be used for signal switching and regulation, and can provide stable performance in a frequently switched working environment, reduce signal loss, and improve the quality of signal transmission.
**5. Low-power switching applications**
Suitable for various **low-power switching applications**, such as **audio equipment**, **LED drive**, **display backlight control**, etc. **WNM2020-3 TR-VB**'s **20V** maximum drain-source voltage makes it very suitable for low-voltage switching applications in these devices, and its low on-resistance reduces energy loss and improves overall efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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