Product introduction：
WNM2016-3 TR-VB Product Introduction
WNM2016-3 TR-VB is a high-performance N-Channel MOSFET in SOT23-3 package, designed for low voltage and high efficiency switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 20V, which is suitable for low voltage power systems and battery-driven devices. The gate-source voltage (VGS) of WNM2016-3 TR-VB is 12V (±), and the threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring reliable switching operation at low voltage. Its on-resistance (RDS(ON)) is 28mΩ at VGS=4.5V, with excellent conductivity, which can reduce energy consumption and provide efficient power conversion. The maximum drain current (ID) is 6A, which is suitable for high-efficiency low-power application scenarios and is widely used in mobile devices, communication modules, low-power power management and other fields.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
WNM2016-3 TR-VB parameter description
- **Package type**: SOT23-3
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS = 2.5V
- 28mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Application areas**: Low power power management, mobile devices, battery management, communication modules, etc.
Domain and module applications：
Applications and module examples
1. **Low-power power management**
The low on-resistance and high efficiency of WNM2016-3 TR-VB make it an ideal choice for low-power power management systems. This MOSFET can effectively reduce power loss and is widely used in various low-voltage power modules, such as battery-driven portable devices and micro power systems. By adopting this MOSFET, the system can operate at low voltage and high efficiency, extending the working time of the device.
2. **Mobile devices**
In mobile devices such as smartphones, tablets, and smart wearable devices, WNM2016-3 TR-VB MOSFET is used as a battery management and power conversion module. Its low on-resistance and small package size (SOT23-3) are very suitable for compact design, which can help reduce power consumption and improve battery efficiency. It is an ideal choice for mobile device power management systems.
3. **Communication module**
This MOSFET is also suitable for various communication modules, especially low-power radio frequency (RF) devices and communication hardware. In these applications, WNM2016-3 TR-VB can be used in the switching power supply part of power regulation and power amplifier to help achieve fast response and high efficiency, ensuring that communication equipment remains stable in high-frequency working environments.
4. **Battery Management System (BMS)**
Due to its excellent conductivity and low threshold voltage, WNM2016-3 TR-VB is particularly suitable for battery management systems, especially the charge and discharge control of lithium batteries. It can effectively regulate the charging current and voltage of the battery to ensure that the battery can be efficiently managed under different working conditions, thereby improving the service life and safety of the battery.
5. **LED Driver**
In LED driver power, WNM2016-3 TR-VB can be used as a switching element for efficient current control and power conversion. Due to its low on-resistance and high current carrying capacity, it can effectively improve the energy efficiency of LED lamps and ensure long-term efficient and stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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