Product introduction:
1. **VSP013N10MS-VB Product Introduction**
VSP013N10MS-VB is a high-performance N-channel MOSFET in DFN8(5x6) package, designed for high voltage and high current power switch applications. With a maximum drain-source voltage (V_DS) of 100V and a maximum drain current (I_D) of 65A, it is suitable for high-efficiency power conversion, inverters, electric drive systems and other fields. The on-resistance (R_DS(ON)) of this MOSFET is very low, 12.36mΩ (V_GS = 4.5V) and 9mΩ (V_GS = 10V), respectively, ensuring low power consumption and high efficiency power conversion. Its gate-source threshold voltage (V_th) is 2.5V, which is suitable for different driving voltage requirements. VSP013N10MS-VB adopts Trench technology, which can provide stable performance and meet the needs of a variety of high current application scenarios.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
|
9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. **VSP013N10MS-VB parameter description**
- **Package type**: DFN8(5x6)
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**:
- 12.36mΩ @ V_GS = 4.5V
- 9mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 65A
- **Technology type**: Trench
- **Operating temperature range**: -40°C to 150°C (typical)
Domain and module applications:
3. **Applications and Module Examples**
VSP013N10MS-VB is widely used in a variety of power electronics and energy conversion applications due to its high voltage and high current carrying capabilities. Here are some typical application examples:
- **DC-DC Converters**: VSP013N10MS-VB plays an important role in efficient DC-DC converters, especially for power supply designs that require high current transmission and low losses. Its low on-resistance and high current handling capability make it an ideal choice for efficient power conversion, such as power supply for computers, industrial equipment, and power conversion in renewable energy systems.
- **Inverters**: This MOSFET performs well in inverter applications, especially in systems such as solar inverters, wind power inverters, and electric vehicle (EV) inverters. Low R_DS(ON) ensures high efficiency and low heat generation during the inverter process, making it suitable for systems that require long-term operation and strict efficiency requirements.
- **Electric Drive Systems**: The VSP013N10MS-VB is an ideal switching element in electric drive systems, especially in electric vehicles (EVs) and power tools. The high current capability and fast switching characteristics of the MOSFET enable efficient energy conversion when driving electric motors, reducing power losses and heat generation.
- **Battery Management System (BMS)**: In battery management systems, MOSFETs are essential as charging and discharging switches. The VSP013N10MS-VB is able to switch quickly and handle large currents, ensuring efficient battery charging, discharging and temperature management. It is suitable for high-power battery systems such as electric vehicles, power storage systems and large-scale UPS (uninterruptible power supplies).
- **Power Management Modules**: The application of this MOSFET in power management modules, especially in areas involving high currents, such as high-efficiency regulators and battery chargers, can significantly improve the conversion efficiency of the system. Due to its superior on-resistance and current carrying capacity, it is suitable for power supply design in fields such as industry, communications and consumer electronics.
- **Power Factor Correction (PFC) Circuit**: VSP013N10MS-VB can also be widely used in power factor correction circuits to ensure stable operation of equipment over a wide voltage range by improving power efficiency and reducing switching losses.
In summary, VSP013N10MS-VB is suitable for a variety of high-efficiency power management, DC-DC conversion, electric drive, battery management and inverter applications, especially in high current, high-efficiency conversion and low conduction loss requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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