Product introduction：
1. **Product Introduction: VSL100N10MS-VB**
VSL100N10MS-VB is a high-efficiency single N-channel MOSFET in SOT23-3 package, designed for low voltage and medium power applications. With a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 4.3A, this MOSFET is suitable for applications with high power consumption requirements, such as switching power supplies, battery-driven systems, load switches, etc. VSL100N10MS-VB uses Trench technology and has a low on-resistance, which can effectively reduce power loss and improve system efficiency. This device is suitable for electronic devices and modules that require miniaturized design, high efficiency and high reliability.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
100V |
20（±V） |
1.8V |
4.3A |
|
|
100mΩ |
|
2. **Detailed parameter description: **
- **Package type**: SOT23-3
VSL100N10MS-VB uses SOT23-3 package, which is a small surface mount package suitable for applications that require compact design. Its small size makes it ideal for space-constrained electronic devices, especially in portable electronic devices and modules.
- **Configuration**: Single N-channel MOSFET
This MOSFET is configured as a single N-channel, which can efficiently control the flow of current and provide low on-resistance, suitable for applications such as power management, switch control and current regulation.
- **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage of VSL100N10MS-VB is 100V, which is suitable for applications in the medium voltage range. It can withstand relatively high voltages and is suitable for low to medium voltage power management, load switching and protection circuits.
- **Gate-Source Voltage (VGS)**: ±20V
The maximum gate-source voltage of this MOSFET is ±20V, which is suitable for standard gate drive circuits, ensuring fast response and switching operations.
- **Threshold Voltage (Vth)**: 1.8V
The threshold voltage is 1.8V, which means that when the gate-source voltage reaches this value, the MOSFET begins to turn on. The lower threshold voltage allows this MOSFET to operate effectively at lower voltages, suitable for low-power applications.
- **On-Resistance (RDS(ON))**:
- 141mΩ (VGS=4.5V)
- 100mΩ (VGS=10V)
The VSL100N10MS-VB has a relatively low on-resistance of 100mΩ at VGS=10V, which can reduce energy loss when current flows and improve the overall efficiency of the system.
- **Maximum drain current (ID)**: 4.3A
The maximum drain current is 4.3A, which is suitable for power supply and switch control applications with medium current loads. This current capability makes it suitable for a variety of power supply and load switching circuits.
- **Technology type**: Trench
The use of Trench technology, which helps to reduce on-resistance and increase switching speed, enables the VSL100N10MS-VB to switch efficiently, especially for high-frequency applications.
Domain and module applications：
3. **Application fields and module examples:**
- **Portable battery drive system**:
VSL100N10MS-VB is widely used in battery drive systems in portable electronic devices (such as smartphones, portable battery packs, tablets, etc.). Due to its low on-resistance and small package, it can improve the efficiency of battery management systems, extend battery life, and support miniaturization.
- **DC-DC converter**:
As an efficient switching element, VSL100N10MS-VB is widely used in DC-DC converters, especially for voltage conversion. Its low on-resistance helps reduce power loss during the conversion process and improve conversion efficiency. It is commonly used in power adapters, embedded systems, power modules and other applications.
- **Low power management**:
In low power management modules, VSL100N10MS-VB is used for current switching, voltage regulation and power switching. Due to its efficient current control and small package, it is ideal for space-constrained devices that require efficient power control, such as LED drivers, wearable devices, and wireless sensors.
- **Battery Protection Circuit**:
This MOSFET is also suitable for battery protection circuits, especially in smart battery and lithium battery systems. Low on-resistance and good switching characteristics help improve the efficiency of battery charging and discharging, while ensuring the safety and long-term use of the battery.
- **Load Switch**:
The VSL100N10MS-VB is suitable for load switching applications, which can control the switching operation of lower power loads, reduce current loss, and improve the operating efficiency of the equipment. Common applications include power switching for power tools, small appliances, and consumer electronics.
- **Miniaturized Electronics**:
Due to the compact size of the SOT23-3 package, the VSL100N10MS-VB is particularly suitable for space-constrained applications such as small appliances, embedded systems, and mobile devices. Its miniaturization allows the MOSFET to provide reliable power control without adding too much volume.
- **Smart Home Devices**:
In smart home systems, VSL100N10MS-VB can be used in modules such as smart power management, load regulation, and sensor control. Its low power consumption and high efficiency make it suitable for smart home devices with strict requirements on energy efficiency, such as smart sockets, smart lamps, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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