Product introduction：
1. **VSB012N03MS-VB Product Introduction**
VSB012N03MS-VB is a single-ended N-channel MOSFET in a DFN8 (3x3) package, designed to provide efficient current transfer and low power consumption applications. With a maximum drain-source voltage (V_DS) of 30V and a gate-source voltage (V_GS) of ±20V, this MOSFET is suitable for power management applications in the low to medium voltage range. Its gate-source threshold voltage (V_th) is 1.7V, which can provide reliable switching control and achieve faster switching speed at lower gate voltages. VSB012N03MS-VB has a low on-resistance (R_DS(on)), which is 13mΩ at V_GS = 10V and 19mΩ at V_GS = 4.5V, which can effectively reduce power consumption and improve efficiency. With a maximum drain current (I_D) of 30A, it is very suitable for applications such as power conversion, load driving and high-frequency switching power supplies. It uses Trench technology to provide efficient current transfer capability and low switching losses, suitable for use in applications requiring high efficiency and compact space.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
|
13mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
2. **VSB012N03MS-VB detailed parameter description**
- **Package type**: DFN8 (3x3)
- **Configuration**: Single-ended N-channel MOSFET (Single N-Channel)
- **Drain-source voltage (V_DS)**: 30V (maximum rating)
- **Gate-source voltage (V_GS)**: ±20V (maximum rating)
- **Gate-source threshold voltage (V_th)**: 1.7V (typical value)
- **R_DS(on) (at V_GS = 10V)**: 13mΩ (on-resistance)
- **R_DS(on) (at V_GS = 4.5V)**: 19mΩ (on-resistance)
- **Drain current (I_D)**: 30A (maximum rating)
- **Maximum power dissipation**: 50W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Switching performance**: Suitable for high frequency applications, providing lower switching losses and higher switching efficiency.
Domain and module applications：
3. **Application fields and module examples**
- **DC-DC converter**: VSB012N03MS-VB is suitable for various DC-DC power converters, especially in power conversion systems with low voltage and high efficiency requirements. This MOSFET can provide lower on-resistance, reduce power consumption and improve energy efficiency. It is widely used in high-efficiency power modules, especially in mobile devices, telecommunications equipment and computer systems.
- **Power tools and motor drives**: Due to its high current carrying capacity (maximum leakage current of 30A), VSB012N03MS-VB is suitable for use as a switching element in power tools and motor drive systems. In these systems, MOSFET can be used to control the start and stop, speed regulation and other functions of the motor. Especially in high-frequency switching applications, it can effectively improve the efficiency and stability of the motor drive.
- **Automotive Electronics and Battery Management System (BMS)**: VSB012N03MS-VB is suitable for battery management system (BMS), especially in electric vehicles (EV) and hybrid electric vehicles (HEV), for battery charging, discharging and battery protection circuits. Its efficient current control capability and low switching loss help improve the energy efficiency and response speed of battery management systems.
- **LED Driver Power**: In LED driver power design, VSB012N03MS-VB has good current regulation capability and low on-resistance, which can effectively control current and voltage and extend the service life of LED lamps. In efficient LED driver power, MOSFET can reduce heat generation and improve system reliability and stability.
- **High-frequency Switching Power**: This MOSFET is widely used in high-frequency switching power supplies (such as AC-DC power adapters, computer power supplies, etc.). Due to its low on-resistance and high-efficiency switching performance, it can effectively reduce energy loss in the power supply and improve the overall power conversion efficiency.
- **Load switch**: VSB012N03MS-VB can also be used as a load switch application, especially in the field of power switches that require fast response. Its high switching speed and high current carrying capacity enable it to effectively control high load currents and is widely used in load control and protection in power systems.
In summary, VSB012N03MS-VB is a high-efficiency, low-power N-channel MOSFET that is suitable for a variety of power management, load drive and motor control fields, and is widely used in power conversion and power control modules in the industrial, automotive, consumer electronics and communications fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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