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VSB011N06MS-VB Product details

Product introduction:

Product Introduction: VSB011N06MS-VB MOSFET

VSB011N06MS-VB is a high-performance single N-channel MOSFET in a compact DFN8(3x3) package, designed for high-efficiency power conversion and switching circuits. The MOSFET has a maximum drain-source voltage (VDS) of 60V, supports a drain current (ID) of up to 30A, and is equipped with a gate threshold voltage (Vth) of 3V, providing an extremely low on-resistance RDS(ON) of 5mΩ at VGS = 10V. Using Trench technology, VSB011N06MS-VB has high switching speed, low power loss and excellent thermal management capabilities, and is an ideal choice for applications such as power modules, battery management systems, DC-DC converters, etc. that require high current and high efficiency.

With its high current carrying capacity and low on-resistance, this MOSFET is widely used in power supplies, industrial equipment, power tools and various high-efficiency circuits. It is particularly suitable for high-power circuits that require fast switching and low conduction losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 60V 3V 30A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 60V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 60V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description

- **Package type**: DFN8(3x3)
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 10V
- **Drain current (ID)**: 30A
- **Technology**: Trench
- **Maximum operating temperature**: 150°C
- **Power dissipation**: Please refer to the rated values in the data sheet

Domain and module applications:

Application fields and module examples: 1. **DC-DC converter**: VSB011N06MS-VB can be widely used in various DC-DC converters, providing low conduction loss and excellent conversion efficiency as a high-efficiency switching element. Its low RDS(ON) and high current carrying capacity make it very suitable for voltage step-up and step-down conversion, improving the energy efficiency of power conversion systems, especially in high-efficiency power modules, UPS systems and battery charging systems. 2. **Battery Management System (BMS): In the battery management system, VSB011N06MS-VB can be used as a current switching element to ensure that the battery maintains an efficient and stable working state during the charging and discharging process. Low on-resistance reduces heat generation and improves overall battery efficiency, which is particularly suitable for demanding applications such as electric vehicles and renewable energy storage systems.

3. **Power tool drive circuit**:
VSB011N06MS-VB can provide stable high current drive in power tools (such as electric drills, angle grinders, etc.). Under these high-load working conditions, the high current capability and low on-resistance of MOSFET ensure the high efficiency and reliability of power tools at work.

4. **Industrial motor drive**:
In industrial motor control, VSB011N06MS-VB, as a switching element of the motor drive circuit, can provide fast response and high efficiency to meet the needs of high-frequency switching and high-current drive. It is suitable for robot control systems, industrial automation equipment and other fields.

5. **Electric vehicles**:
VSB011N06MS-VB can be used in the drive system of electric vehicles (such as electric cars, electric motorcycles, electric bicycles, etc.). Its low on-resistance and high current carrying capacity can ensure that electric vehicles can maintain high efficiency, low temperature, and long-term stable operation when running under high load, improving the performance of the power system and battery life.

6. **Photovoltaic Inverter and Smart Grid**:
As a key switching element in smart grid and photovoltaic inverter, VSB011N06MS-VB can provide efficient power transmission in energy conversion system. Its fast switching capability and low power consumption make this MOSFET particularly suitable for solar power generation system, wind power generation system and other renewable energy management systems.

7. **Power Adapter and Switching Power Supply**:
In power adapter and switching power supply applications, VSB011N06MS-VB is widely used in mobile phone chargers, laptop power adapters and other devices with its high efficiency and low power consumption. High-frequency switching and low RDS(ON) can significantly reduce power loss, improve system efficiency and extend battery life.

8. **Consumer Electronics**:
In consumer electronics (such as smart homes, portable audio, electric toys, etc.), VSB011N06MS-VB can be used as a switching element in low-voltage power supply circuits to help reduce energy loss and improve overall performance, enhancing consumer experience.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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