Product introduction：
Product Introduction (VS3698AE-VB)
**VS3698AE-VB** is a single N-channel MOSFET in a DFN8 (3x3) package with a drain-source voltage (VDS) of 30V and a maximum continuous current (ID) of 60A. This MOSFET is manufactured using advanced Trench technology and has a very low on-resistance (RDS(ON)), which is 5mΩ at VGS=4.5V and 3.9mΩ at VGS=10V. Its gate-source voltage (VGS) is ±20V and its threshold voltage (Vth) is 1.7V, which can effectively meet the needs of high-efficiency and low-power circuits.
This MOSFET is widely used in high-efficiency power management, electric vehicles, DC-DC converters, wireless communications and other fields, and is particularly suitable for power electronics products that require high current, high efficiency and low conduction loss.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
|
3.9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: VS3698AE-VB
- **Package type**: DFN8 (3x3)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3.9mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 60A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C (typical)
Domain and module applications：
Application fields and module examples
1. **Power management field**:
- In power converters and high-efficiency power modules, VS3698AE-VB MOSFET can provide efficient energy conversion as a switching element, especially suitable for DC-DC converters, power management systems and inverters. In these applications, the low RDS(ON) value helps to reduce conduction losses and improve the overall efficiency and reliability of the system.
2. **Electric vehicle (EV) drive system**:
- In the battery management system and drive control module of electric vehicles, VS3698AE-VB can be used as an efficient switching element to support the charging and discharging process and power control of electric vehicle batteries. Due to the low on-resistance of this MOSFET, it can maintain low temperature rise and high efficiency under high current load, which is suitable for motor drive and battery management of electric vehicles.
3. **Wireless communication equipment**:
- In wireless communication systems, especially 5G base stations and RF power amplifiers, VS3698AE-VB MOSFET can be used for high-frequency signal amplification and signal switching. Its excellent conductivity makes it an indispensable component in high-frequency, high-power communication systems.
4. **Automotive Electrical Systems**:
- This MOSFET can be used in automotive electronic control units (ECUs), on-board chargers, and automotive battery management systems. Due to its low on-resistance characteristics, it can reduce power losses and improve the overall energy efficiency and operating stability of vehicle systems.
5. **Computer Power Supplies and Battery-Powered Devices**:
- In computer power supplies, UPS power supplies, and mobile device battery management systems, the VS3698AE-VB MOSFET has low switching losses and conduction losses, which can improve the efficiency of the power supply and extend the service life of the equipment, especially in situations where high current handling is required, such as fast charging systems.
These characteristics make the VS3698AE-VB have great advantages in multiple high-efficiency power management applications, and can cope with a variety of application scenarios that require low power consumption, high efficiency, and high current.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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