Product introduction：
Product Introduction
**VS3622DP-VB** is a high-performance **Half-Bridge N+N-Channel MOSFET** in **DFN8(5x6)-C** package. This MOSFET is equipped with two N-Channel MOSFET elements and is designed for half-bridge circuits to achieve efficient power conversion, drive and switching control. Its maximum drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, and turn-on voltage (Vth) is 1.7V, which is suitable for low-voltage and high-frequency applications. **VS3622DP-VB** has an ultra-low on-resistance (RDS(ON)) of 3.4mΩ at VGS = 10V and 4mΩ at VGS = 4.5V, which can greatly reduce power loss in the current path and improve efficiency. Its maximum drain current (ID) is 60A, which is suitable for high-current applications and can provide reliable performance at low temperature rise.
This MOSFET is manufactured using Trench technology, which ensures low on-resistance and excellent thermal performance. It is suitable for high-power, low-power half-bridge circuit design, especially in power conversion, load driving and high-efficiency power amplification.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
|
3.4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-C |
Half-Bridge-N+N |
30V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-C |
Half-Bridge-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8 (5x6)-C
- **Configuration**: Half-Bridge N+N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **4mΩ @ VGS = 4.5V**
- **3.4mΩ @ VGS = 10V**
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
**VS3622DP-VB** adopts Trench technology, which can effectively reduce the on-resistance (RDS(ON)) and ensure lower power loss. The device has good heat dissipation capability under high current load, suitable for high frequency and high efficiency power supply applications.
Domain and module applications：
Applications and module examples: 1. DC-DC converters: VS3622DP-VB can be widely used in half-bridge circuits of DC-DC converters, especially in applications that require high efficiency and low power consumption. Due to its low on-resistance and high current carrying capacity, it can reduce energy loss during the conversion process and improve system efficiency. Common application scenarios include battery-powered devices, power tools, and power systems for portable electronic devices. 2. Electric vehicle (EV) drive systems: In the battery management system (BMS) and electric drive systems of electric vehicles, VS3622DP-VB can be used as a MOSFET in a half-bridge configuration for efficient motor drive circuits. The high current carrying capacity and low on-resistance of the MOSFET can provide stronger driving force and reduce heat generation, thereby improving system efficiency and extending equipment life.
3. **LED Driver**:
**VS3622DP-VB** can be used in efficient LED driver power supplies, especially in high-brightness lighting and backlighting applications. The MOSFET can provide stable current control, optimize the brightness output of the LED, and ensure long-term stable operation of the power system. Its low power consumption and low heat design are suitable for LED systems with high power requirements.
4. **Industrial Power Management**:
In industrial power management systems, **VS3622DP-VB** can be used as an efficient power switch component for power conversion, load regulation, and power amplifier modules. The MOSFET has excellent performance under high current loads, which can improve the working efficiency of industrial power equipment and reduce unnecessary energy waste.
5. **Switching Power Supply**:
**VS3622DP-VB** can be used in various switching power supplies (SMPS), such as communication equipment, server power supplies, and other data center power systems. Its low RDS(ON) and high current carrying capacity enable switching power supplies to have lower power losses and higher efficiency, especially in high-frequency switching mode.
6. **Battery Management System (BMS)**:
In the battery management system, **VS3622DP-VB** can be used as a MOSFET in a half-bridge configuration for battery charge and discharge control. Due to its low on-resistance and high current capability, it can effectively control the battery charge and discharge process, extend battery life and ensure the safety of the battery system.
7. **Wireless Communication System**:
In wireless communication systems (such as radio base stations, satellite communication equipment, etc.), **VS3622DP-VB** can be used as a key component in the power amplifier module. Its low on-resistance and high current handling capability can help optimize system efficiency, improve signal quality, and reduce power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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