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VS3504AP-VB Product details

Product introduction:

1. Product Introduction

**VS30P39AP-VB** is a unipolar P-channel power MOSFET in **DFN8(5x6)** package, designed for high-efficiency low-voltage applications. Its maximum drain-source voltage (VDS) is **-30V**, suitable for power management and switching applications with low voltage and high current loads. The on-resistance (RDS(ON)) of this MOSFET is very low, which is **7.8mΩ** at **VGS=10V** and **12mΩ** at **VGS=4.5V**, which can effectively reduce switching losses and improve the overall efficiency of the system. Its maximum drain current (ID) is **-60A**, which can handle high current loads and is suitable for high-power switching and power management applications. Using **Trench** technology, this MOSFET can provide excellent switching performance and low losses, especially suitable for high-efficiency power supply design, load switching and battery-powered systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-P -30V -3V -120A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-P -30V -3V -120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-P -30V -3V -120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-P
2. Detailed parameter description

- **Model**: VS30P39AP-VB
- **Package**: DFN8(5x6)
- **Configuration**: Unipolar P-channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -2.5V
- **RDS(ON)**:
- 12mΩ @ VGS=4.5V
- 7.8mΩ @ VGS=10V
- **ID (maximum drain current)**: -60A
- **Technology**: Trench
- **Maximum power loss**: Low RDS(ON), suitable for high current and high performance applications
- **Operating temperature range**: -55°C to +150°C
- **Features**: High current carrying capacity, low on-resistance, low switching losses

Domain and module applications:

3. Applications and module examples

# 1. **High-efficiency power management**
**VS30P39AP-VB** is suitable for various **power management systems**, especially in situations where efficient power transmission and low loss are required. In **DC-DC converters**, the low RDS(ON) of the MOSFET can effectively reduce power loss during the conversion process and improve energy efficiency, especially for high-current output ends. It can provide stable and efficient current control in these applications.

# 6. **Power conversion and motor drive**
Due to its high current carrying capacity, the VS30P39AP-VB is also suitable for **motor drive circuits**. Whether driving a DC motor or a stepper motor, this MOSFET can provide low-loss current switching to ensure smooth operation of the motor, especially for motor drive systems that require fast start and stop, such as automation equipment, robots, HVAC systems, etc.

Summary
**VS30P39AP-VB** is a high current, low power consumption P-channel MOSFET, which is widely used in **power management**, **battery management system**, **power tools**, **load switch** and other fields. Its low RDS(ON) characteristic makes it excellent in high-efficiency power supply design, suitable for various electrical systems that require high current load control and low power loss, especially in **industrial power supply system** and **electric drive system**. It plays a vital role.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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