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UT85N03L-TA3-T-VB Product details

Product introduction:

**UT85N03L-TA3-T-VB MOSFET Product Introduction**

UT85N03L-TA3-T-VB is a single N-channel MOSFET in TO220 package, designed for high-efficiency switching applications. Its drain-source voltage (VDS) is 30V, the maximum drain current (ID) is 120A, and it has a very low on-resistance (RDS(ON)), which is 4mΩ at VGS = 4.5V and 3mΩ at VGS = 10V, ensuring low power consumption and high efficiency in high current applications. This MOSFET uses Trench technology, which can provide excellent switching performance under low voltage driving conditions. It is suitable for high current, high-efficiency power management, load switching and electric equipment control. With its extremely low on-resistance, high current handling capability and low heat output, UT85N03L-TA3-T-VB performs well in high-frequency switching and high-power applications, and is widely used in modules that require high efficiency, such as power conversion and battery-powered systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
**UT85N03L-TA3-T-VB MOSFET detailed parameter description**

- **Package**: TO220
- **Configuration**: Single-N-Channel (single N-type channel)
- **VDS (drain-source voltage)**: 30V
- **VGS (gate-source voltage)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 4mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench (groove structure)

Domain and module applications:

**UT85N03L-TA3-T-VB MOSFET Applications and Module Examples**

1. **Power Management System**
- In the power management system, UT85N03L-TA3-T-VB can provide efficient power conversion as a switching element, especially suitable for applications such as DC-DC converters, boost or buck converters. Its low RDS(ON) characteristics make the power loss extremely low, which can significantly improve the efficiency in high-efficiency power conversion applications, especially suitable for scenes requiring high current and high power.

2. **Battery-powered devices**
- Suitable for various battery-driven devices such as power tools, portable devices and electric vehicles (EVs). UT85N03L-TA3-T-VB has extremely high current carrying capacity and can handle large current requirements. At the same time, its low on-resistance helps extend battery life and reduce power loss, making it suitable for applications requiring efficient battery management.

3. **Electric Vehicles (EV)**
- In the power system of electric vehicles, UT85N03L-TA3-T-VB, as part of the battery management system (BMS), can effectively regulate the battery charging and discharging process, optimize energy distribution, and ensure efficient operation. Its high current carrying capacity enables it to provide stable current control in the high-power drive system of electric vehicles and effectively reduce heat loss.

4. **Solar Inverters**
- UT85N03L-TA3-T-VB is suitable for power switches in solar inverter systems, especially in applications with extremely high conversion efficiency requirements. Solar inverters convert DC power into AC power, and their efficiency directly affects the performance of the overall system. The low RDS(ON) characteristics of UT85N03L-TA3-T-VB reduce losses in high-frequency switching and improve energy conversion efficiency.

5. **High-frequency switching power supply**
- In high-frequency switching power supplies (SMPS), UT85N03L-TA3-T-VB can switch efficiently, ensuring fast response and precise control. Due to its ultra-low on-resistance and excellent thermal management capabilities, this MOSFET can significantly reduce the heat generated during the switching process, allowing the power system to still work efficiently and stably under high frequency and high current conditions.

6. **Load switch**
- UT85N03L-TA3-T-VB can be applied to various load switch applications, including computer power supplies, consumer electronics, smart home devices, etc. In these applications, it can efficiently control the current flow of the load, ensure the normal operation of the electrical system, and improve the overall energy efficiency through low power loss. It is suitable for scenarios that require high-power load switching.

7. **High-power LED driver**
- In high-power LED drive applications, UT85N03L-TA3-T-VB as a switching element can effectively regulate the current, reduce switching losses, and improve the efficiency of LED lamps. Capable of handling high current output, this MOSFET is suitable for various LED lighting applications, especially high-power LED modules that require higher power drive.

8. **Battery Management System (BMS)**
- In a battery management system, the UT85N03L-TA3-T-VB can be used to accurately control the charge and discharge of multiple battery cells to ensure the health and efficient operation of the battery. Its high current capability and low RDS(ON) characteristics make it an ideal choice for managing high power output and safety in battery packs, especially for power tools, electric vehicles and other occasions that require efficient battery control.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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