Product introduction：
1. Product Introduction - UT70P03-VB
**UT70P03-VB** is a high-performance **single P-channel MOSFET**, using **TO220 package**, suitable for medium and high power electronic systems that require negative voltage control. Its maximum **VDS (drain-source voltage)** is **-30V**, supporting **±20V** gate-source voltage range, and can perform efficient switching control in multiple low-voltage power supply systems.
The **Vth (gate-source threshold voltage)** of this MOSFET is **-3V**, which means it can be turned on at a lower gate voltage, suitable for low-voltage drive applications. Its **RDS(ON)** is **5mΩ** at **VGS = 4.5V** and **4mΩ** at **VGS = 10V**, ensuring low on-resistance and efficient current carrying capacity. **ID (drain current)** reaches **-100A**, which is very suitable for occasions that require high current control.
The use of **Trench technology** makes this MOSFET have lower switching loss, excellent current conduction capability, and can provide stable and high efficiency. It is widely used in power conversion, drive circuits and high-power switching fields.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-30V |
|
-3V |
-100A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-P |
-30V |
|
-3V |
-100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-P |
-30V |
|
-3V |
-100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-P |
|
|
|
|
|
|
|
2. Detailed parameter description
| **Parameter** | **Description** |
| ------------------ | --------------------------------------------- |
| **Model** | UT70P03-VB |
| **Package** | TO220 |
| **Configuration** | Single P-channel MOSFET |
| **VDS (drain-source voltage)** | -30V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (gate-source threshold voltage)** | -3V |
| **RDS(ON)** | 5mΩ @ VGS = 4.5V |
| | 4mΩ @ VGS = 10V |
| **ID (drain current)** | -100A |
| **Technology** | Trench technology|
| **Maximum power** | About 300W (depending on voltage and current) |
| **Operating temperature range** | -55°C to +150°C |
- **VDS (drain-source voltage)**: Maximum **-30V**, suitable for negative voltage applications and switching operations.
- **VGS (gate-source voltage)**: Maximum **±20V**, supporting common gate voltage drive.
- **Vth (gate-source threshold voltage)**: **-3V**, can be turned on with low gate voltage.
- **RDS(ON)**: **5mΩ** @ VGS = 4.5V, **4mΩ** @ VGS = 10V, ensuring low conduction loss.
- **ID (drain current)**: Maximum **-100A**, capable of carrying higher load current.
- **Technology**: Adopt **Trench technology** to optimize switching characteristics and improve efficiency.
Domain and module applications：
3. Application fields and module examples
# **1. Power management and control**
**UT70P03-VB** is suitable for **DC-DC converter** and **switching power supply** applications, especially in power management systems with high current and high efficiency requirements. Its low on-resistance and high current carrying capacity enable it to significantly reduce power loss and improve conversion efficiency in power circuits. Common application fields include **industrial power supply, server power supply, communication power supply**, etc.
# **6. Load switch and reverse current protection**
**UT70P03-VB** is also widely used in **load switch** and **reverse current protection** circuits. As a switching element of the load, it can protect the circuit from damage when the current flows in the reverse direction. It is widely used in **battery reverse protection, power switching, battery management module** and other fields.
# **Summary**
**UT70P03-VB** is a **P-channel MOSFET** that performs well in multiple high-power and high-current applications. Whether it is **power management, motor control, solar inverter**, or **LED drive, battery management**, this MOSFET can provide efficient current control and switching performance, significantly improving the overall efficiency and reliability of the system. Its low on-resistance and high current carrying capacity make it widely used in high-power, low-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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