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UT6898L-S08-R-VB Product details

Product introduction:

UT6898L-S08-R-VB MOSFET Product Introduction

**UT6898L-S08-R-VB** is a dual N-channel MOSFET in **SOP8** package, designed for high-efficiency switching applications, especially suitable for use in power management, battery drive, load switching and other systems. This model is equipped with two N-channel MOSFETs, which can achieve efficient current switching, and is particularly suitable for occasions requiring dual-channel MOSFETs. Its maximum drain-source voltage (VDS) is **20V**, the maximum drain current is **10A**, and it uses advanced **Trench** technology to provide very low on-resistance (RDS(ON)), thereby significantly reducing power loss and improving the efficiency of the entire system. The low RDS(ON) characteristics of UT6898L-S08-R-VB make it very suitable for fields requiring low losses such as efficient power conversion, battery management and load control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 10A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 10A
- **Technology type**: Trench technology

Domain and module applications:

Application fields and module examples

**1. Power Management Systems**
UT6898L-S08-R-VB MOSFET is widely used in DC-DC converters, battery chargers and power distribution modules. Its low on-resistance characteristic helps reduce system losses and improve conversion efficiency, and is suitable for scenarios that require efficient power transmission. The dual N-channel configuration enables this MOSFET to play a key role in efficient power conversion, especially in multi-output power supply designs, providing balanced load management.

**2. Battery Management Systems**
In battery management systems, UT6898L-S08-R-VB MOSFET is used for key functions such as battery charge and discharge control, overcharge protection, and over-discharge protection. Its low RDS(ON) characteristic ensures efficient current transmission during battery charge and discharge, reduces power loss and extends battery life. This MOSFET is suitable for battery management circuits in various portable electronic devices, smart phones, tablets and other devices.

**3. Power Tools and Home Appliances**
UT6898L-S08-R-VB MOSFET is also widely used in power switching and load management applications in power tools, electric equipment and home appliances. It can efficiently drive motors and other high-power loads, reduce power losses, and provide fast switching response. By providing a stable current flow, this MOSFET can improve the overall efficiency and performance of power tools and home appliances.

**4. Electric Transportation**
In electric transportation (such as electric cars and electric bicycles), UT6898L-S08-R-VB MOSFET is used for battery management, drive circuits, and battery protection circuits. Due to its efficient current switching capability and low power loss characteristics, it helps improve the operating efficiency of electric vehicles, extend battery life, and ensure the safety and stability of battery charging and discharging.

**5. Driver Circuits and Load Switching**
UT6898L-S08-R-VB is suitable for motor drive, LED drive and other load switching applications. Its dual N-channel configuration enables balanced load switching in these applications, ensuring efficient flow of current and reducing switching losses. In LED driver applications, it provides precise current regulation to ensure the stability and long life of the LED.

**6. Portable Devices**
This MOSFET can also be used in power management modules in portable devices. Its compact SOP8 package and low RDS(ON) characteristics make it suitable for applications with space constraints and high power efficiency requirements, such as smart watches, wireless headphones, portable audio and other devices.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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