Product introduction：
UT4812G-S08-R-VB MOSFET Product Introduction
**UT4812G-S08-R-VB** is a dual N-channel MOSFET in a **SOP8** package, designed for high-efficiency switching applications. This model's dual MOSFET configuration (Dual-N+N-Channel) provides two sets of N-channel MOSFETs, suitable for applications requiring dual-channel MOSFETs. The maximum drain-source voltage of this MOSFET is 30V, and the maximum drain current is 6.8A and 6.0A (for two N channels), respectively, which is very suitable for a variety of applications such as load driving, power management, switching circuits, etc. The use of **Trench** technology gives it an extremely low on-resistance (RDS(ON)) characteristic, thereby reducing power loss and improving overall efficiency. The low on-resistance makes this MOSFET very suitable for power conversion, load control and drive modules that require low loss and high efficiency.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS = 4.5V
- 22mΩ @ VGS = 10V
- **Maximum leakage current (ID)**:
- 6.8A (N-Channel 1)
- 6.0A (N-Channel 2)
- **Technology type**: Trench technology
Domain and module applications：
Application fields and module examples
**1. Power Management**
UT4812G-S08-R-VB MOSFET is widely used in power management systems, especially in DC-DC converters, AC-DC power adapters, and battery management systems. Due to its low RDS(ON) characteristics, it can reduce power loss and improve overall conversion efficiency. The dual N-channel configuration makes it particularly suitable for efficient power distribution and switching control, providing stable output voltage and current.
**2. Power Tools and Electric Equipment**
This MOSFET is very suitable for use in power tools, electric equipment, and high-power mobile devices. In these devices, UT4812G-S08-R-VB can provide efficient current switching and voltage control under high current loads to ensure stable operation of the equipment. Its low on-resistance characteristics are very important for reducing power loss and extending battery life.
**3. Smart Battery Management Systems**
In the smart battery management system, UT4812G-S08-R-VB MOSFET, as an important component of battery protection and charge and discharge control, can ensure that the current can flow quickly and stably during battery charging and discharging. Its low on-resistance helps to extend battery life, reduce heat generation, and improve the efficiency of the battery management system.
**4. Driver Circuits**
This MOSFET is also very suitable for applications such as motor drive and LED drive. Due to its high current carrying capacity and low RDS(ON), UT4812G-S08-R-VB can realize efficient switching and drive circuits and reduce system power loss. In LED drive applications, it can provide precise current control to ensure stable operation and long service life of the LED.
**5. Analog Signal Processing and Switching**
In analog signal processing and signal switching modules, UT4812G-S08-R-VB MOSFET can provide efficient current switching, help control signal paths and reduce switching noise. Its low on-resistance and fast switching characteristics make it also perform well in high-speed signal switching, especially in applications requiring low noise and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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