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UT4392-S08-R-VB Product details

Product introduction:

Product Introduction

**UT4392-S08-R-VB** is a unipolar N-channel power MOSFET in SOP8 package, designed for medium voltage and high efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of 30V and a gate drive voltage range of ±20V, suitable for high current switching applications. The gate threshold voltage (Vth) of UT4392-S08-R-VB is 1.7V, and the on-resistance (RDS(ON)) is 8mΩ at VGS=10V and 11mΩ at VGS=4.5V, with very low conduction losses. The maximum drain current (ID) is 13A, and Trench technology is used to provide low on-resistance and excellent switching performance. It is widely used in high-efficiency power management, load switch control and motor drive.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

- **Model**: UT4392-S08-R-VB
- **Package type**: SOP8
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ @ VGS=4.5V
- 8mΩ @ VGS=10V
- **Maximum drain current (ID)**: 13A
- **Technology**: Trench technology
- **Maximum power dissipation**: 50W (assuming that the specific power dissipation value needs to refer to the data sheet)
- **Junction temperature range**: -55°C to +150°C
- **Features**: Low on-resistance, excellent switching performance, low loss design, suitable for high current and high frequency switching applications.

Domain and module applications:

Application fields and module examples

1. **DC-DC Converters**
UT4392-S08-R-VB can be used as a switching element in DC-DC converters, especially in low-voltage, medium-current conversion scenarios. Due to its low on-resistance and high current carrying capacity, this MOSFET can significantly reduce switching losses and improve conversion efficiency, and is widely used in battery-powered devices, low-power electronic products, etc.

2. **Switching Power Supply (SMPS)**
In a switching power supply (SMPS), UT4392-S08-R-VB can be used as the main switching element to provide efficient current control. Its low RDS(ON) and excellent switching performance make it a key component for efficient energy conversion, suitable for applications such as adapters, power modules, and communication equipment.

3. **Battery Management System (BMS)**
In the battery management system, UT4392-S08-R-VB is suitable for battery charge and discharge control and battery balancing system. Low on-resistance helps improve the efficiency of the battery management system, reduce power loss in the battery management process, and extend battery life. It is suitable for battery management of electric vehicles, energy storage systems and portable devices.

4. **LED Driver**
This MOSFET is suitable for use as a switching element in the LED driver power supply, which can efficiently control the current flow, ensure stable current output, and provide efficient power conversion. Low RDS(ON) enables it to effectively reduce heat loss in high-power LED lighting systems and improve the overall efficiency of the system.

5. **Power Tools and Home Appliances**
In power tools and home appliances, UT4392-S08-R-VB can be used as a load switch and power control element. Due to its high current carrying capacity and low on-resistance, it is suitable for high-frequency current control, which helps improve motor efficiency and the stability of power modules, and is suitable for small home appliances and high-efficiency power tools.

6. **Portable devices and consumer electronics**
UT4392-S08-R-VB has a small SOP8 package, which is very suitable for space-constrained applications such as smartphones, tablets, wearable devices, etc. These devices have high requirements for power efficiency and volume. This MOSFET can provide low power consumption and efficient power management to optimize overall device performance.

7. **Motor drive system**
In the motor drive system, UT4392-S08-R-VB can be used as an efficient switching element for current regulation and speed control. Due to its low on-resistance, it can effectively reduce switching losses and improve system efficiency, especially for applications that drive motors efficiently, such as robots, home appliances, and automation equipment.

8. **Inverter Application**
In inverter applications, UT4392-S08-R-VB can be used for the process of converting DC to AC. Its low on-resistance helps improve system efficiency and is suitable for power systems that require efficient conversion and regulation of electrical energy, such as solar inverters, wind power generation, and other fields.

**UT4392-S08-R-VB**'s low on-resistance and high current capability make it an ideal choice for applications such as efficient power management, load switch control, battery management, and LED driving. It is widely used in a variety of fields, including communication equipment, home appliances, power tools, LED lighting, etc., and can effectively improve system performance and energy efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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